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IN THE UNITED STATES DISTRICT COURT FOR THE DISTRICT OF DELAWARE LG DISPLAY CO., LTD., Plaintiff, v. CHI MEI OPTOELECTRONICS CORPORATION, et al., Defendants. AMENDED JOINT CLAIM CONSTRUCTION CHARTS Pursuant to the Court's May 19, 2008 Stipulation and Order Modifying the Scheduling Order (D.I. 208), LG Display Co., Ltd. and LG Display America, Inc. ("LG Display"), Chi Mei Optoelectronics Corporation and Chi Mei Optoelectronics USA, Inc. ("CMO"), and AU Optronics Corporation and AU Optronics Corporation America ("AUO") submit their Joint Claim Construction Charts as follows: I. Patents asserted by LG Display: U.S. Patent No. 4,624,737 U.S. Patent No. 5,019,002 U.S. Patent No. 5,825,449 U.S. Patent No. 6,664,569 U.S. Patent No. 6,803,984 U.S. Patent No. 5,905,274 U.S. Patent No. 6,815,321 U.S. Patent No. 7,176,489 U.S. Patent No. 7,218,374 II. Patents asserted by AUO: U.S. Patent No. 5,748,266 U.S. Patent No. 6,689,629 U.S. Patent No. 6,734,944 U.S. Patent No.6,778,160 U.S. Patent No. 6,976,781 Exhibit J Exhibit K Exhibit L Exhibit M Exhibit N Exhibit A Exhibit B Exhibit C Exhibit D Exhibit E Exhibit F Exhibit G Exhibit H Exhibit I Civil Action No. 06-726 (JJF) Civil Action No. 07-357 (JJF) CONSOLIDATED CASES

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U.S. Patent No.7,090,506 U.S. Patent No. 7,101,069 U.S. Patent No. 7,125,157 III. Patents asserted by CMO: U.S. Patent No. 5,619,352 U.S. Patent No. 6,008,786 U.S. Patent No. 6,013,923 U.S. Patent No. 6,134,092 U.S. Patent No. 6,734,926 U.S. Patent No. 7,280,179

Exhibit O Exhibit P Exhibit Q

Exhibit R Exhibit S Exhibit T Exhibit U Exhibit V Exhibit W

Each party has listed what it contends is intrinsic evidence to support its contentions. All parties reserve the right to contest whether any such evidence is intrinsic or extrinsic.

August 6, 2008 OF COUNSEL: Gaspare J. Bono Song K. Jung R. Tyler Goodwyn, IV Lora A. Brzezynski MCKENNA LONG & ALDRIDGE LLP 1900 K Street, N.W. Washington, D.C. 20006 (202) 496-7500

/s/ Richard D. Kirk
____________________________________ Richard D. Kirk (#0922) Ashley B. Stitzer (#3891) THE BAYARD FIRM 222 Delaware Avenue, 9th Floor P.O. Box 25130 Wilmington, DE 19899-5130 (302) 655-5000 [email protected] Attorneys for LG Display Co., Ltd. and LG Display America, Inc.

/s/ Philip A. Rovner
OF COUNSEL: Jonathan S. Kagan Alexander C.D. Giza Adam Hoffman IRELL & MANELLA LLP 1800 Avenue of the Stars, Suite 900 Los Angeles, California 90067-4276 (310) 277-1010 _______________________________ Philip A. Rovner (#3215) POTTER ANDERSON & CORROON LLP Hercules Plaza P.O. Box 951 Wilmington, DE 19899 (302) 984-6000 [email protected] Attorneys for Chi Mei Optoelectronics Corporation and Chi Mei Optoelectronics USA, Inc. -2-

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OF COUNSEL: Vincent K. Yip Peter J. Wied Terry Garnett Katherine Murray PAUL HASTINGS JANOFSKY & WALKER LLP 515 South Flower Street, 25th Floor Los Angeles, CA 90071 (213) 683-6000 M. Craig Tyler Brian D. Range WILSON SONSINI GOODRICH & ROSATI 8911 Capital of Texas Highway North Westech 360, Suite 3350 Austin, TX 78759-8497 (512) 338-5400 Ron E. Shulman Julie M. Holloway WILSON SONSINI GOODRICH & ROSATI 650 Page Mill Road Palo Alto, CA 94304-1050

/s/ Karen L. Pascale
____________________________________ John W. Shaw (#3362) Karen L. Pascale (#2903) YOUNG CONAWAY STARGATT & TAYLOR LLP The Brandywine Building 1000 West Street, 17th Floor P.O. Box 391 Wilmington, DE 19899-0391 (301) 571-6600 [email protected] Attorneys for AU Optronics Corporation and AU Optronics Corporation America

-3-

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EXHIBIT A

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms insulating substrate Des. C Agreed Constructions The material (such as glass, quartz, ceramic, insulator-coated silicon or insulator coated metal) upon which the transistor is fabricated to provide mechanical support and electrical insulation. Disputed Constructions Claim Terms a process for producing a thin-film transistor Des. C LGD Construction a method for manufacturing thin-film transistors such as for a liquid crystal display Intrinsic Support 1:6-29; 1:56-58; 1:61-68; 2:1-2; 2:8-68; 3:1-62; 4:123; Figs 1a-3d. CMO Construction plain meaning in light of the construction below for "thin-film" transistor AUO Construction Plain meaning.

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms thin-film transistor Des. C LGD Construction A three-terminal semiconductor device in which the current flow through one pair of terminals, the source and drain, is controlled or modulated by an electric field that penetrates the semiconductor; this field is introduced by a voltage applied at the third terminal, the gate, which is separated from the semiconductor by an insulating layer. The thin-film transistor is formed using thin-film techniques on an insulating substrate rather than a single crystal silicon wafer. CMO Construction A three-terminal semiconductor device in which the current flow through one pair of terminals, the source and drain, is controlled or modulated by an electric field that penetrates the semiconductor; this field is introduced by a voltage applied at the third terminal, the gate, which is separated from the semi-conductor by an insulating layer. The thin-film transistor is formed using thin-film techniques on an insulating substrate rather than in a single crystal silicon wafer. AUO Construction Plain meaning. Alternate: A three-terminal semiconductor device in which the current flow through one pair of electrodes, the source electrode and drain electrode, is controlled or modulated by an electric field that penetrates the semiconductor; this field is introduced by a voltage applied at the third electrode, the gate electrode, which is separated from the semiconductor by an insulating layer. The thinfilm transistor is formed using thin-film techniques on an insulating substrate rather than a single crystal silicon wafer. Intrinsic Support E.g., Figs. 2-3; 1:8-29; 1:5658; 2:8-4:2

Intrinsic Support 1:6-29; 1:56-58; 1:61-68; 2:1-2; 2:8-68; 3:1-62; 4:123; Figs 1a-3d.

Intrinsic Support 1:8-31; 1:47-53; 4:3-12 see also 5/5/05 Order re Claim Construction, Case No. 026775, at 13; Second Revised Joint Claim Construction Statement, Case No. 026775, at 89-93

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms forming a gate electrode on an insulating substrate Des. C LGD Construction CMO Construction plain meaning giving form or shape to a patterned electrically conductive material that controls current flow through the channel between the source electrode and drain electrode that is above and supported by or in contact with material (such as glass, quartz, ceramic, insulator-coated silicon or insulator coated metal) upon which the transistor is fabricated to provide mechanical support and electrical insulation Intrinsic Support 1:14-21; 2:8-24; 3:21-39; Figs 1a-3d. giving form or shape to...above and supported by or in contact with Intrinsic Support 1:14-17; 2:8-17; 3:21-39; Figs 1a, 2a, 3a. AUO Construction Producing a gate electrode above, supported by, and in contact with an insulating substrate

Intrinsic Support E.g., Figs. 2-3; 2: 8-16; 3:23-28 Producing . . . above, supported by, and in contact with Intrinsic Support E.g., Figs. 2-3; 2: 8-16; 3:23-35

forming ... on

C

plain meaning

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms continuously depositing on said gate electrode and substrate a gate insulating film, a high-resistivity semiconductor film and a conducting film Des. C LGD Construction the formation of the gate insulating film, the highresistivity semiconductor film and conducting film (without intervening films) above and supported by or in contact with (i) the patterned electrically conductive material that controls current flow through the channel between the source electrode and drain electrode and (ii) the material (such as glass, quartz, ceramic, insulatorcoated silicon or insulator coated metal) upon which the transistor is fabricated to provide mechanical support and electrical insulation. Intrinsic support 1:14-53; 1:55-58; 2:8-45; 3:21-35; 3:54-62; 4:3-24; Figs 2a-3d; Abstract. CMO Construction construe the term: "depositing on said gate electrode and substrate" as: depositing above and in contact with the gate electrode and the insulating substrate AUO Construction Precipitating a gate insulating film, a high resistivity semiconductor film and a conductive film on the gate electrode and the substrate without intervening films in between.

Intrinsic Support 1:17-38; 3:28-35; 3:53-4:2; 4:17-23; Figs. la-ld, 2b, 3b (e.g., elements 1, 2, 3)

Intrinsic Support E.g., Abstract; Figs. 2-3; 1:32-46; 2:17-53; 3:22-4:12

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms continuously depositing Des. L C A LGD Construction the formation of the gate insulating film, the highresistivity semiconductor film and conducting film without intervening films Intrinsic Support 1:17-21; 2:17-45; 3:28-35; 3:54-62; 4:1-13; Abstract; Figs 2b and 3b. CMO Construction the formation of the gate insulating film, the highresistivity semiconductor film and conducting film without intervening films Intrinsic Support 1:17-38; 3:28-35; 3:53-4:2; 4:17-23; Figs. la-ld, 2b, 3b (e.g., elements 3, 4, 20 and 30) see also 5/5/05 Order re Claim Construction, Case No. 02-6775, at 8-9; Second Revised Joint Claim Construction Statement, Case No. 02-6775, at 95101. this term should be construed as part of the larger term "depositing on said gate electrode and substrate" AUO Construction Precipitating... without intervening films

Intrinsic Support E.g., Abstract; Figs. 2-3; 1:32-46; 2: 17-53; 3:22-4:12

depositing on

C

the formation of the gate insulating film, the highresistivity semiconductor film and conducting film above and supported by or in contact with Intrinsic Support 1:14-21; 2:8-45; 3:28-35; 3:54-62; 4:1-13; Abstract; Figs 2b and 3b.

precipitating above, supported by and in contact with

Intrinsic Support E.g., Figs. 2-3; 2:17-53; 3:22-4:12

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms depositing Des. A LGD Construction the formation of the gate insulating film, the highresistivity semiconductor film and conducting film Intrinsic Support 1:17-21; 2:17-45; 3:28-35; 3:54-62; 4:1-13; Abstract; Figs 2b and 3b. a thickness of nonconductive material (such as SiNx) that has a high electrical resistance and insulates the transistor gate from the semiconductor. CMO Construction plain meaning AUO Construction Precipitating

Intrinsic Support E.g., Figs. 2-3; 2:17-53; 3:22 - 4:12 a thickness of material (such as SiNx, SiOx, or a multilayer film made of such materials) with a high electrical resistance, spanning the region from the gate electrode to the high resistivity semiconductor layer, for insulating the gate electrode from the channel Intrinsic Support Plain meaning or Insulating film formed over the gate region

gate insulating film

C

Intrinsic Support

Intrinsic Support E.g., Figs. 2-3; 2:17-53; 3:22-4:12

1:12-21, 2:18-38; 3:28-35; 1:17-21; 4:17-23; 1:32-40; Abstract; Figs. 1b-1d, 2b-2e, 4:47-53 (Claim 2); 4:26-46 and 3b-3d. (Claim 1); 3:53-4:2; Figs 2a-2e, 3

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms high-resistivity semiconductor film Des. C LGD Construction a thickness of semiconductor material (such as amorphous silicon, hydrogenated amorphous silicon, amorphous siliconfluorine alloy, amorphous silicon-hydrogen-fluorine alloy, or a microcrystalline amorphous silicon) that has a higher resistance to current flow relative to the low-resistivity semiconductor film. Intrinsic Support 1:8-29; 1:32-49; 2:17-32; 2:38-43; 2:54-60; 3:7-10; 3:16-21; 3:28-41; 4:48-62; 4:1-23; Abstract; Figs. 1b1d, 2b-2e, and 3b-3d. a thickness of electrically conductive material Intrinsic Support 1:25-29; 1:32-51; 2:10-36; 2:43-68; 3:1-10; 3:28-35; 3:48-62; 4:1-23; Abstract; Figs. 2b-2e and 3b-3d. CMO Construction a thickness of semiconductor material (such as amorphous silicon, hydrogenated amorphous silicon, amorphous siliconfluorine alloy, amorphous silicon-hydrogen-fluorine alloy, or a microcrystalline amorphous silicon) that has a high resistance to current flow and acts as the channel of the transistor Intrinsic Support 1:32-51; 2:8-10; 2:38-43; 2:60-3:4; Figs. 2b-2e, 3b-3d (e.g., element 4) a thickness of electrically conductive material that lies adjacent to the channel layer Intrinsic Support AUO Construction Plain meaning or Semiconductor having the property of high resistivity

Intrinsic Support E.g., Figs. 2-3; 2:17-53; 3:22-4:12

conducting film

C

Plain meaning

Intrinsic Support

2:17-21; 2:46-3:10; E.g., Figs. 2-3; 2:17-53; 3:53¬4:2; Figs. 2b-2e, 3b-3d 3:22-4:12 (e.g., elements 20, 30)

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms a conducting film containing at least a low-resistivity semiconductor film Des. L C A LGD Construction the conducting film is composed of a lowresistivity semiconductor film and possibly other conductive films Intrinsic Support 1:18-36; 1:43-57; 2:17-37; 3:28-41; 3:48-62; 4:1-13, Abstract, Figs.2b-2e and 3b3d. CMO Construction plain meaning the terms "conducting film" and "low-resistivity semiconductor film" should be construed separately from this term AUO Construction Plain meaning

Intrinsic Support E.g., Figs. 2-3; 2: 17-53; 3:22-4:12

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms low-resistivity semiconductor film Des. C LGD Construction a thickness of semiconductor material (such as low-resistivity amorphous silicon, hydrogenated amorphous silicon, amorphous siliconfluorine alloy, amorphous silicon-hydrogen-fluorine alloy, or a microcrystalline amorphous silicon which contains phosphorous or other impurities to enhance the conductivity of the film) that has a lower resistance to current flow relative to the high-resistivity semiconductor film. Intrinsic Support 1:25-29; 1:32-51; 2:17-50; 2:54-68; 3:1-10; 3:28-41; 3:48-62; 5:1-23; Abstract; Figs. 1d, 2b-2e, 3b-3d. CMO Construction a thickness of semiconductor material (such as amorphous silicon, hydrogenated amorphous silicon, amorphous siliconfluorine alloy, amorphous silicon-hydrogen-fluorine alloy, or a microcrystalline amorphous silicon) that has a low resistance to current flow AUO Construction Plain meaning Or semiconductor having the property of low resistivity

Intrinsic Support 1:32-51; 2:17-21; 2:38-44; 3:53-4:2; Figs. 2b-2e, 3b-3d (e.g., element 20)

Intrinsic Support E.g., Figs. 2-3; 2: 17-53; 3:22 - 4:12

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms without exposing them to an oxidizing atmosphere Des. C LGD Construction without exposing the gate insulating film, the highresistivity semiconductor film, and the conducting film containing at least the low-resistivity semiconductor film to an atmosphere that would create a detectable amount of oxidation on a film. Intrinsic Support 1:32-46; 1:47-53; 2:17-36; 3:28-35; 3:53-62; 4:1-12; Figs. 2b-2e, 3b-3d. the gate insulating film, the high-resistivity semiconductor film, and the conducting film containing at least the low-resistivity semiconductor film. Intrinsic Support 2:17-36; 3:28-35; 3:53-62; 4:1-12; Abstract; Figs. 2b2e, 3b-3d. CMO Construction without permitting the gate insulating film, highresistivity semiconductor film, low-resistivity semiconductor film, or conducting film to come into contact with an uncontrolled ambient atmosphere which contains oxidizing agents Intrinsic Support 1:32-51; 2:17-53; 3:28-35; Figs. 2b-2e, 3b-3d the gate insulating film, the high-resistivity semiconductor film, and the conducting film containing at least the low-resistivity semiconductor film AUO Construction Without exposing them to an atmosphere containing an oxidizing agent

Intrinsic Support E.g., Figs. 2-3; Abstract; 1:32-46; 2:17-53; 3:22-4:12 Indefinite.

them

C

Intrinsic Support E.g., Figs. 2-3; 2:17-53; 3:22-4:12

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms oxidizing atmosphere Des. C LGD Construction an atmosphere that would create a detectable amount of oxidation on a film. Intrinsic Support 1:21-51; 2:17-53; 3:28-35; 3:53-4:23; Figs. 2b-2e, 3b3d; Abstract. The removal of selected portions of a surface using etching techniques (such as wet etching, plasma etching, reactive ion etching, and ion etching) in order to produce a desired pattern on the surface. Intrinsic Support 1:14-21; 1:25-29; 1:32-35; 2:10-16; 2:54-66; 3:7-10; 3:28-41; 3:44-48; 4:3-9; Figs 1a-d; 2a-e; 3a-d. CMO Construction an uncontrolled ambient atmosphere which contains oxidizing agents Intrinsic Support 1:32-51; 2:17-53; 3:28-35; Figs. 2b-2e, 3b-3d plain meaning AUO Construction Atmosphere containing an oxidizing agent Intrinsic Support E.g., Figs. 2-3; Abstract; 1:32-46; 2:17-53; 3:22-4:12 Selectively removed or corroded by a chemical agent

selectively etched

C

Intrinsic Support E.g., Figs. 2-3; 2:54-60; 3:22-4:12

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms they are partly left as an island region on said gate electrode Des. L LGD Construction a portion of the high resistivity semiconductor film and conducting film has been etched around its perimeter into a region located over the gate electrode of a thin-film transistor Intrinsic Support 1:14-17; 1:25-29; 2:7-16; 2:54-66; 3:22-; Figs. 2-3. a portion of the high resistivity semiconductor film and conducting film has been etched around its perimeter into a region located over the gate electrode of a thin-film transistor. Intrinsic Support 1:14-17; 1:25-29; 2:7-16; 2:54-66; 3:22-; Figs. 2-3. CMO Construction plain meaning AUO Construction Indefinite

Intrinsic Support E.g., Figs. 2-3; 2:54-60; 3:22-4:12 Isolated region above, supported by, and in contact with the gate electrode

island region on said gate electrode

C

plain meaning

Intrinsic Support E.g., Figs. 2-3; 2:54-60; 3:22-4:12

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms gate electrode Des. C A LGD Construction a patterned electrically conductive material that controls current flow through the channel between the source electrode and drain electrode CMO Construction a patterned electrically conductive material that controls current flow through the channel between the source electrode and drain electrode AUO Construction A patterned, electrically conductive material formed in the gate region. Current flows through the channel between the source electrode and the drain electrode under control of the gate electrode. Intrinsic Support E.g., Figs. 2-3; 2:8-16; 3:2328

Intrinsic Support 1:14-18; 2:7-16; 3:33-29; Figs 1a-3d.

Intrinsic Support see 5/5/05 Order re Claim Construction, Case No. 02¬6775, at 7-8; Second Revised Joint Claim Construction Statement, Case No. 02-6775 at 93-95 plain meaning

a fourth step for selectively forming a source electrode and drain electrode

C A

forming a source electrode and drain electrode in selected regions only Intrinsic Support 1:21-29; 1:32-51; 2:17-68; 3:1-14; 3:28-62; 4:1-12; Abstract; Figs. 1d, 2d-2e, 3c-3d.

Step-plus function element. Function is "selectively forming a source electrode and drain electrode" Step is disclosed: E.g., Figs. 2-3; 2:60-3:10; 3 :22-4:12

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms selectively forming Des. C LGD Construction forming in selected regions only Intrinsic Support 1:14-17; 1:25-29; 2:10-36; 2:60-68; 3:1-10; 3:24-52; 4:3-9; Abstract; Figs. 1a-1d, 2a-2e, 3a-3d. CMO Construction plain meaning AUO Construction Selectively producing Intrinsic support E.g., Figs. 2-3; 2:60-3:10; 3 :22-4:12

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms source electrode Des. C A LGD Construction a patterned, electrically conductive material formed over the source region. Current flows through the channel between the source electrode and drain electrode under control of the gate electrode. CMO Construction construe term: "a source electrode and a drain electrode" as: Patterned, electrically conductive material formed over the source region and drain region, respectively, of a transistor. Current flows through the channel between the source electrode and the drain electrode of the transistor under control of the gate electrode of the transistor. Intrinsic Support 1:32-51; 2:60-66; 3:4-7; 3:36-41; 3: 59-4:6; Figs. 2d 2e, 3c-3d (e.g., elements 5, 6) AUO Construction A patterned, electrically conductive material formed over the source region. Current flows through the channel between the source electrode and the drain electrode under control of the gate electrode.

Intrinsic Support 1:21-29; 1:32-51; 2:17-68; 3:1-14; 1:28-62; 4:1-12; Abstract; Figs 1d, 2d-2e, 3c3d.

Intrinsic Support E.g., Abstract; 1:17-29; 2:60-3:10; 3:36-41

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms drain electrode Des. C A LGD Construction a patterned, electrically conductive material formed over the drain region. Current flows through the channel between the source and drain electrode under the control of the gate electrode. Intrinsic Support 1:21-29; 1:32-51; 2:17-68; 3:1-14; 3:28-62; 4:1-12; Abstract; Figs. 1d, 2d-2e, 3c-3d. touching a part of the surface of the island region Intrinsic Support 2:54-3:10; 3:53-62; 4:1-2; Figs 2d-2e; 3c-3d. CMO Construction this term should be construed as part of the larger term "a source electrode and a drain electrode" AUO Construction A patterned, electrically conductive material formed over the drain region. Current flows through the channel between the source electrode and the drain electrode under control of the gate electrode. Intrinsic Support E.g., Abstract; 1:17-29; 2:60-3:10; 3:36-41 Touching a part of the surface of the island region Intrinsic Support 2:60-66; 3:4-7; 3:36-41 Figs. 2d-2e, 3c-3d Plain meaning Intrinsic Support E.g., Figs. 2-3; 2:60-3:10; 3:22-4:12

contacting a part of the surface of said island region

L C A

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms a fifth step for selectively removing said conducting film exposed on said island region with said source and drain electrodes serving as at least a part of the mask Des. A LGD Construction a fifth step for removing selected regions only of the conducting film on the island region not covered by the source electrode, drain electrode or mask wherein the source electrode and drain electrode serve as at least a part of the pattern above a surface from which material is to be selectively removed; the pattern is made of material that is resistive to the removal technique relative to the material to be removed Intrinsic Support 1:14-54; 2:10-14; 2:54-68; 3:1-16; 3:24-52; Abstract; Figs 1a-1d, 2a-2e, 3a-3d. CMO Construction eliminating all the conducting film in the space between the edges of the source and drain electrodes AUO Construction a fifth step for using the source and drain electrodes to partially define the boundary for the removal of the conducting film exposed on the island region.

Intrinsic Support 1:32-51; 2:60-66; 3:8-10; 3:36-41; 3:59-4:6; Figs. 2c2e, 3b-3d

Intrinsic Support E.g., Figs. 2-3; 2:60-3:10; 3:22-4:12

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms selectively removing said conducting film exposed on said island region Des. C LGD Construction removing selected regions only of the conducting film on the island region not covered by the source electrode, drain electrode or mask Intrinsic Support 1:14-54; 2:10-14; 2:54-68; 3:1-16; 3:24-52; Abstract; Figs 1a-1d, 2a-2e, 3a-3d. removing selected regions only Intrinsic Support 1:14-29; 2:10-14; 2:54-68; 3:1-16; 3:24-52; Abstract; Figs 1a-1d, 2a-2e, 3a-3d. the conducting film on the island region that is not covered by the source electrode, drain electrode or mask Intrinsic Support 1:14-54; 2:10-14; 2:54-68; 3:1-16; 3:24-52; Abstract; Figs 1a-1d, 2a-2e, 3a-3d. CMO Construction eliminating all the conducting film in the space between the edges of the source and drain electrodes AUO Construction Plain meaning

Intrinsic Support 1:8-31; 1:32-51; 2:60-66; 3:8-10; 3:36-41; 3:59-4:6; Figs. 1b-1d, 2c-2e, 3b-3d this term should be construed as part of the larger term, "selectively removing said conducting film exposed on said island region." Plain meaning

Intrinsic Support E.g., Figs. 2-3; 2:60-3:10; 3:22-4:12 Plain meaning Intrinsic Support E.g., Figs. 2-3; 2:60-3:10; 3:22-4:12 the conducting film on top of the island region exposed to the atmosphere

selectively removing

C

said conducting film exposed on said island region

A

Intrinsic Support E.g., Figs. 2-3; 2:60-3:10; 3:22-4:12

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms said source and drain electrodes serving as at least a part of the mask Des. C A LGD Construction the source and drain electrodes serving as at least a part of the pattern above a surface from which material is to be selectively removed, where the pattern is made of material that is resistive to the removal technique relative to the material to be removed Intrinsic Support 1:14-54; 2:10-14; 2:54-68; 3:1-16; 3:24-52; Abstract; Figs 1a-1d, 2a-2e, 3a-3d. serving as at least a part of the pattern above a surface from which material is to be selectively removed, where the pattern is made of material that is resistive to the removal technique relative to the material to be removed Intrinsic Support 1:14-29; 2:10-14; 2:54-68; 3:1-16; 3:24-52; Abstract Figs. 1a-1d, 2a-2e, 3a-3d. CMO Construction the source and drain electrodes are part of the pattern on the top surface that protects underlying layer from being removed while allowing the portion of the layer exposed between the source and drain electrodes to be removed Intrinsic Support 1:8-31; 1:32-51; 2:60-66; 3:8-10; 3:36-41; 3:59-4:6; Figs. lb-ld, 2c-2e, 3b-3d this term should be construed as part of the term "said source and drain electrodes serving as at least a part of the mask" see also construction of "mask" below Intrinsic Support 1:8-31; 1:32-51; 2:60-66; 3:8-10; 3:36-41; 3:59-4:6; Figs. lb-ld, 2c-2e, 3b-3d Intrinsic Support E.g., Figs. 2-3; 2:60-3:10; 3:22-4:12 AUO Construction Using the source and drain electrodes to partially define the boundary for the removal or formation of the conductive film.

Intrinsic Support E.g., Figs. 2-3; 2:60-3:10; 3:22-4:12 using ... to partially define the boundary for the removal process

serving as at least a part of the mask

L

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms at least a part of the mask Des. C LGD Construction at least a part of the pattern above a surface from which material is to be selectively removed, where the pattern is made of material that is resistive to the removal technique relative to the material to be removed. Intrinsic Support 1:14-29; 2:10-14; 2:54-68; 3:1-16; 3:24-52; Abstract; Figs 1a-1d, 2a-2e, 3a-3d. a part of the pattern above a surface from which material is to be selectively removed, where the pattern is made of material that is resistive to the removal technique relative to the material to be removed. Intrinsic Support 1:14-29; 2:10-14; 2:54-68; 3:1-16; 3:24-52; Abstract; Figs 1a-1d, 2a-2e, 3a-3d. CMO Construction this term should be construed as part of the term "said source and drain electrodes serving as at least a part of the mask" AUO Construction to partially define the boundary for the removal or formation process

Intrinsic Support E.g., Figs. 2-3, 2:60-3:10; 3:22-4:12 this term should be construed as part of the term "said source and drain electrodes serving as at least a part of the mask" to partially define the boundary for the removal or formation process

a part of the mask

A

Intrinsic Support E.g., Figs. 2-3; 2:60-3:10; 3:22-4:12

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms mask Des. A LGD Construction A pattern above a surface from which material is to be selectively removed. The pattern is made of material that is resistive to the removal technique relative to the material to be removed. CMO Construction A top surface pattern above one or more layers of material that will be selectively removed according to the shape of the mask. The mask is made of material that is resistive to the removal technique and defines by its edges the boundaries of the material selected for removal. Intrinsic Support 1:8-31; 1:32-51; 2:60-66; 3:8-10; 3:36-41; 3:59-4:6; Figs. lb-ld, 2c-2e, 3b-3d plain meaning AUO Construction A pattern to define the boundary for the removal or formation process Intrinsic Support E.g., Figs. 2-3; 2:60-3:10; 3:22-4:12

Intrinsic Support 1:14-29; 2:10-14; 2:54-68; 3:1-16; 3:24-52; Abstract; Figs 1a-1d, 2a-2e, 3a-3d. a thickness of material that provides protection such as electrical stability and chemical isolation Intrinsic Support 1:29-31; 3:11-21; 3:44-48; Figs 2e, 3d.

surface passivation film

C

Plain meaning

Intrinsic Support E.g., Figs. 2-3; 3:11-21; 3:22-4:12

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT A LG DISPLAY USP 4,624,737 Claim Terms exposing a part of each of said source electrode, drain electrode and gate electrode Des. C A LGD Construction removing portions of one or more layers to uncover a part of each of said source electrode, drain electrode and gate electrode Intrinsic Support 1:6-31; 3:11-21; 3:36-52; Fig. 2e; 3d. removing portions of one or more layers to uncover Intrinsic Support 1:6-31; 3:11-21; 3:36-52; Fig. 2e; 3d. CMO Construction plain meaning AUO Construction causing a part of the source electrode, drain electrode and gate electrode to be exposed to the atmosphere Intrinsic Support E.g., Figs. 2-3; 3:11-21; 3:22-4:12 Uncovering Intrinsic Support E.g., Figs. 2-3; 3:11-21; 3:22-4:12

exposing

A

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EXHIBIT B

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT B LG DISPLAY USP 5,019,002 Disputed Constructions Claim Terms substrate Des. C LGD Construction the material (such as glass) upon which a transistor or integrated circuit is fabricated to provide mechanical support Intrinsic Support: 1:34-38; 3:33-38; Figs. 1-7; Abstract. depositing and etching a matrix of transparent electrically conductive material to form pixel electrodes above and supported by or in contact with the substrate Intrinsic Support 1:38-2:6; 2:45-68; 3:3-21; 3:25-36; 3:47-59; 4:4-22, 4:42-45; 4:61-5:6, 5:24-32; 5:42-5:57; 6:46-6:50; 6:607:18; 7:47-7:60; 8:49-62; Figs. 1, 4-7; Figs. 1-6; Abstract. CMO Construction Plain meaning AUO Construction Plain meaning

Intrinsic Support E.g., Figs. 1-2; 37-38; 4:1122; 4:67-5:2 Forming a pattern of pixels above, supported by and in contact with the substrate

forming a pattern of pixels on said substrate

C

forming a repeating configuration of redundant subpixels

Intrinsic Support 7:46-60; 4:58-60; 5:44-57; 6:19-25; 6:26-36; and figures referenced therein

Intrinsic Support E.g., Figs. 1, 2, 3, & 6; 3:254:3; 5:2-6; 5:24-32

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT B LG DISPLAY USP 5,019,002 Claim Terms forming a plurality of row and column intersecting pixel activation lines Des. C LGD Construction depositing and etching electrically conductive material patterned in rows and columns that control pixels Intrinsic Support 1:38-42; 1:56-59-2:6; 2:5462; 3:33-54, 3:60-63; 4:4558; 5:58-6:17; 6:25-59; 7:315; 7:23-29; Figs. 1, 4-7; Abstract. CMO Construction forming a plurality of row intersecting pixel activation lines and column intersecting pixel activation lines Intrinsic Support 6:1-18; 6:26-36; 5:58-68; 6:38-50; 7:3-10; and figures referenced therein AUO Construction forming a plurality of row intersecting pixel activation lines and a plurality of column intersecting pixel activation lines Intrinsic Support E.g., Figs. 1, 4, 5, & 6; 3:254:3; 5:44-7:10

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT B LG DISPLAY USP 5,019,002 Claim Terms interconnecting substantially all of said row lines to one another and substantially all of said column lines to one another Des. A LGD Construction electrically connecting with conductive material all or nearly all row lines to at least one other row line and electrically connecting with conductive material all or nearly all of the column lines to at least one other column line Intrinsic Support 1:34-35; 5:65-68; 6:6-17; 6:26-32; 6:38-60; 8:1-37; 8:49-62, Fig. 4-7. CMO Construction electrically connecting with conductors nearly all, but not all, of said row lines to one another and nearly all, but not all, of said column lines to one another AUO Construction joining almost all of the row lines together and joining almost all of the column lines together

Intrinsic Support 5:65-68; 6:6-9; 6:42-43; 8:5-7; and figures referenced therein see also June 13, 2006 Memorandum Opinion 4-6

Intrinsic Support E.g., Figs. 1, 4, 5, 6 & 7; 3:25-4:3; 5:44-7:10; 8:1-48; U.S. Pat. No. 4,820,222: Figs. 1, 6, 7, & 8; 7: 39-8:34 App 07/218312, 3/31/89 OA, Pages 2-3; App 07/218312, 6/25/90 Proposed Response, Pages 2-3 App 06/948224, 3/16/88 Office Action, Pages 3-4; App 06/948224, 9/16/88 Response, Pages 7-9

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT B LG DISPLAY USP 5,019,002 Claim Terms interconnecting Des. L C LGD Construction electrically connecting with conductive material Intrinsic Support 1:34-35; 5:65-68; 6:6-17; 6:26-32; 6:38-60; 8:1-37; 8:49-62, Fig. 4-7; App 07/218,312, 3/31/1989, Office Action, pages 2-4; App 07/218,312, 7/12/1990, Response, pages 2-3. CMO Construction electrically connecting with conductors Intrinsic Support 5:65-68; 6:6-9; 6:42-43; 8:5-7; and figures referenced therein see also June 13, 2006 Memorandum Opinion 4-6 AUO Construction Joining together Intrinsic Support E.g., Figs. 1, 4, 5, 6 & 7; 3:25-4:3; 5:44-7:10; 8:1-48 U.S. Pat. No. 4,820,222: Figs. 1, 6, 7, & 8; 7: 398:34 App 07/218312, 3/31/89 OA, Pages 2-3 App 07/218312, 6/25/90 Proposed Response, Pages 2-3 App 06/948224, 3/16/88 Office Action, Pages 3-4; App 06/948224, 9/16/88 Response, Pages 79 Almost all Intrinsic Support E.g., Figs. 1, 4, 5, 6 & 7; 3:25-4:3; 5:44-7:10; 8:1-48 U.S. Pat. No. 4,820,222: Figs. 1, 6, 7, & 8; 7:39-8:34

substantially all

C A

all or nearly all Intrinsic Support 1:34-35; 5:65-68; 6:6-17; 6:26-32; 6:38-60; 8:1-37; 8:49-62; Fig. 4-7.

nearly all, but not all Intrinsic Support 1:15-35; 1:56-2:10; 2:4551; 4:9-31; and figures referenced therein

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT B LG DISPLAY USP 5,019,002 Claim Terms row lines Des. C LGD Construction electrically conductive material patterned in rows that control pixels CMO Construction Indefinite or lines connecting all pixels in a row Intrinsic Support 1:38-42; 1:56-59-2:6; 2:5462; 3:33-54, 3:60-63; 4:4558; 5:58-6:17; 6:25-59; 7:315; 7:23-29; Figs. 1, 4-7; Abstract. electrically conductive material patterned in columns that control pixels Intrinsic Support 1:38-42; 3:37-46; and figures referenced therein Intrinsic Support E.g., Figs. 1, 4, 5, 6 & 7; 3:25-4:3; 5:44-7:10; 8:1-48 U.S. Pat. No. 4,820,222: Figs. 1, 6, 7, & 8; 7: 398:34 Indefinite; or Lines connecting all pixels in a column AUO Construction Indefinite; or Lines connecting all pixels in a row

column lines

C

indefinite or lines connecting all pixels in a column

Intrinsic Support 1:38-42; 1:56-59-2:6; 2:5462; 3:33-54, 3:60-63; 4:4558; 5:58-6:17; 6:25-59; 7:315; 7:23-29; Figs. 1, 4-7; Abstract.

Intrinsic Support 1:38-42; 3:37-46; and figures referenced therein

Intrinsic Support E.g., Figs. 1, 4, 5, 6 & 7; 3:25-4:3; 5:44-7:10; 8:1-48 U.S. Pat. No. 4,820,222: Figs. 1, 6, 7, & 8; 7:39-8:34

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT B LG DISPLAY USP 5,019,002 Claim Terms row and column lines Des. C LGD Construction electrically conductive material patterned in rows and columns that control pixels CMO Construction Indefinite or the row lines and the column lines Intrinsic Support 1:38-42; 1:56-59-2:6; 2:5462; 3:33-54, 3:60-63; 4:4558; 5:58-6:17; 6:25-59; 7:315; 7:23-29; Figs. 1, 4-7; Abstract. Intrinsic Support 1:38-42; 3:37-46; and figures referenced therein Intrinsic Support E.g., Figs. 1, 4, 5, 6 & 7; 3:25-4:3; 5:44-7:10; 8:1-48 U.S. Pat. No. 4,820,222: Figs. 1, 6, 7, & 8; 7:39-8:34 AUO Construction Indefinite; or The row lines and the column lines

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT B LG DISPLAY USP 5,019,002 Claim Terms outer electrostatic discharge guard ring Des. L C A LGD Construction a closed or open ring, or open L or C-shaped line, outside the active matrix display to provide protection from electrostatic discharge Intrinsic Support 1:8-14; 2:37-68; 3:20-21; 4:22-31; 4:46-60; 7:11-22; 7:30-34; 8:1-17; 8:2437:8:40-44; 8:49-62; Abstract; Figs. 5-7; App 07/218,312, 3/31/1989, Office Action, pages 2-4; App 07/218,312, 7/12/1990, Proposed Response, page 2-3. CMO Construction a closed or open ring, or open L or C-shaped line, outside the active matrix display to provide protection from electrostatic discharges Intrinsic Support AUO Construction A surrounding structure outside the active matrix display to provide protection from electrostatic discharges Intrinsic Support

Abstract; 2:61-62; 8:27-29; E.g., Figs. 4, 5, 6 & 7; 3:25and figures referenced 4:3; 5:44-7:10; 8:1-48 therein see also June 13, 2006 Memorandum Opinion 7-10

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT B LG DISPLAY USP 5,019,002 Claim Terms resistance Des. L C A LGD Construction a circuit component designed to provide opposition to electric current flowing through itself and to minimize current surge in the TFT array from electrostatic discharge Intrinsic Support 1:8-14; 2:45-68; 4:46-60; 5:32-43; 7:14-18; 7:35-46; 7:61-68; 8:18-39; 8:49-62; Abstract; App 07/218,312, 3/31/1989, Office Action, pages 2-4; App 07/218,312, 7/12/1990, Response, pages 2-3. CMO Construction a circuit component that has a specified resistance to the flow of electric current and is used to minimize the current surge from an electrostatic discharge AUO Construction A circuit component that has a specified ratio between voltage and the flow of electric current, and used to minimize the current surge from electrostatic discharge. Intrinsic Support

Intrinsic Support

8:23-34; and figures E.g., Figs. 4, 5, 6 & 7; 3:25referenced therein see also 4:3; 5:44-7:10; 8:1-48 June 13, 2006 Memorandum Opinion 10-13

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT B LG DISPLAY USP 5,019,002 Claim Terms to provide protection from electrostatic discharges between said row and column activation lines during manufacture of the displays Des. A LGD Construction to minimize current surge in the TFT array from electrostatic discharge during manufacture of the display CMO Construction Indefinite AUO Construction To guard against electrostatic discharges between the row activation lines and column activation lines during the manufacturing of the displays Intrinsic Support' E.g., 4:9-6:59; 9:1-48

Intrinsic Support 1:8-14; 2:45-68; 4:46-60; 5:32-43; 7:14-18:7:35-46; 7:61-68; 8:23-39; 8:49-62; Abstract; Fig. 5, 7. to minimize current surge in the TFT array from electrostatic discharge during manufacture of the display Intrinsic Support 1:8-14; 2:45-68; 4:46-60; 5:32-43; 7:14-18:7:35-46; 7:61-68; 8:23-39; 8:49-62; Abstract; Fig. 5, 7.

protection from electrostatic discharges

C

Indefinite

Plain meaning; or Guarding against electrostatic discharges Intrinsic Support E.g., 4:9-6:59; 8:1-48

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT B LG DISPLAY USP 5,019,002 Claim Terms row and column activation lines Des. C LGD Construction electrically conductive material patterned in rows and columns that control pixels CMO Construction indefinite or control lines activating all pixels in rows and control lines activating all pixels in columns Intrinsic Support 1:38-42; 1:56-59-2:6; 2:5462; 3:33-54, 3:60-63; 4:4558; 5:58-6:17; 6:25-59; 7:315; 7:23-29; Figs. 1, 4-7; Abstract. physically disconnecting said guard ring and row and column interconnections Intrinsic Support 1:38-42; 2:4-7; 3:37-46; and figures referenced therein AUO Construction Indefinite; or Control lines activating all. pixels in rows and control lines activating all pixels in columns. Intrinsic Support E.g., 4:9-6:59; 8 : 1-48

removing said outer guard ring and row and column interconnections

L C

physically disconnecting said guard ring and row and column interconnections

Indefinite; physically disconnecting said guard ring and lines connecting the row and column , intersecting pixel activation lines from the substrate Intrinsic Support E.g., Fig. 7; 2:45-68; 8:1-48 App 07/218312, 3/31/89 OA, Pages 2-3 App 07/218312, 6/25/90 Proposed Response, Pages 2-3 U.S. Pat. No. 4,820,222: Figs. 6 & 8; 6: 42-7:38

Intrinsic Support 2:45-68; 8:11-17; 8:26-30; 8:40-62; Abstract; App 07/218,312, 3/31/1989, Office Action, pages 2-4; App 07/218,312, 7/12/1990, Response, pages 2-3.

Intrinsic Support Abstract; 2:64-65; 8:27-30; and figures referenced therein

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT B LG DISPLAY USP 5,019,002 Claim Terms removing Des. A LGD Construction physically disconnecting said guard ring and row and column interconnections CMO Construction physically disconnecting AUO Construction Taking away Alternate 1: separating or breaking off Alternate 2: physically disconnecting Intrinsic Support 2:45-68; 8:11-17; 8:26-30; 8:40-62; Abstract; App 07/218,312, 3/31/1989, Office Action, pages 2-4; App 07/218,312, 7/12/1990, Response, pages 2-3. Intrinsic Support Abstract; 2:64-65; 8:27-30; and figures referenced therein Intrinsic Support E.g., Fig. 7; 2:45-68; 8:1-48 App 07/218312, 2/31/89 OA, Pages 2-3 App 07/218312, 7/22/90 Proposed Response, Pages 2-3 U.S. Pat. No. 4,820,222: Figs. 6 & 8; 6: 42-7:38

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT B LG DISPLAY USP 5,019,002 Claim Terms inner electrostatic discharge guard ring Des. L C LGD Construction a closed or open ring, or open L or C-shaped line, inside the source and/or gate pads to provide protection from electrostatic discharge Intrinsic Support 1:8-14; 2:45-68; 4:46-60; 5:32-43; 6:60-72; 7:14-68; 8:49-62, Abstract. CMO Construction a closed or open ring, or open L or C-shaped conductive line, inside the active matrix display to provide protection from electrostatic discharges Intrinsic Support 7:14-21; 7:22-68; and figures referenced therein see also June 13, 2006 Memorandum Opinion 710; LGD's Mar. 8, 2006 Plaintiffs Memorandum in Support of Its Proposed Claim Constructions 15-17 AUO Construction Ring structure inside the active matrix display to provide protection from electrostatic discharges

Intrinsic Support E.g., Fig. 5; 2:45-68; 6:607:68

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT B LG DISPLAY USP 5,019,002 Claim Terms shunt switching elements Des. C A LGD Construction shunt transistors, including floating gate, no gate, an oxide below to form a spark gap, or other active switching elements such as diodes Intrinsic Support 7:22-50; 7:61-68; 8:49-62; Abstract. CMO Construction an active switching element like a shunt transistor or diode AUO Construction A switching circuit for shunting electrostatic discharges

Intrinsic Support 8:57-59; 8:18-27; 8:34-39; and figures referenced therein see also LGD's Mar. 8, 2006 Plaintiff's Memorandum in Support of Its Proposed Claim Constructions 19-20.

Intrinsic Support E.g., Fig. 5; 2:45-68; 6:607:68

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EXHIBIT C

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT C LG DISPLAY USP 5,825,449 Claim Terms substrate indium tin oxide layer contact hole is provided through ... layer(s) Des. C C C A Agreed Constructions the material (such as glass) upon which a transistor or integrated circuit is fabricated to provide mechanical support. a thickness of indium tin oxide (ITO) the contact hole is formed in the layer(s)

Disputed Constructions Claim Terms wiring structure Des. C LGD Construction a structure electrically connecting at least two points Intrinsic Support 4:24-27; Figs. 1-3. CMO Construction a structure providing an electrically conductive path that connects at least two terminals Intrinsic Support 1:52-54; 2:16-18; 4:1-5; 4:24-26; Figs. 4, 6; 5/5/05 Order re Claim Construction, Case No. 02 6775, at 13; Second Revised Joint Claim Construction Statement, Case No. 02 6775, at 179 AUO Construction A structure made by wires

Intrinsic Support E.g., Figs. 2-5; 2:31-3:14

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT C LG DISPLAY USP 5,825,449 Claim Terms conductive layer Des. L C LGD Construction thickness of electrically conductive material CMO Construction a thickness of electrically conductive material that may include one or more patterned features, all of a single material Intrinsic Support 1:34-37; 1:56-60; 1:61-64; 2:37-46; 3:44-47; 4:50-53; 4:61-5:22; 7:36-39 (claim 10); Figs. la, le, 2a, 2e, 3; `449 File history, 8/1/97 Office Action, para. 2. plain meaning AUO Construction Plain meaning

Intrinsic Support 1:34-38; 2:31-3:15; 3:44-50; 4:50-53; 4:65-5:22; Fig 1-3.

layer

C

a thickness of material Intrinsic Support 1:34-38; 2:31-3:15; 3:44-50; 4:50-53; 4:65-5:22; Fig 1-3. above and in contact with a first part of the substrate Intrinsic Support 1:31-48; 1:56-64; 2:37-46: 3:44-62; 4:19-23; 4:39-41; 4:65-5:8; Figs 2-3; App. No. 08/781,188, 8/1/97, Office Action, page 2.

Plain meaning

formed on a first portion of said substrate

C

above and in contact with a first part of the substrate Intrinsic Support 1:56-60; Figs. la, le, 2a, 2e, 3

Produced above, supported by, and in contact with a first portion of the substrate Intrinsic Support E.g., Figs. 3, 4, & 5; 4:464:64; 4:65-5:5; 5:23-38; 5:39-54

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT C LG DISPLAY USP 5,825,449 Claim Terms formed on Des. C A LGD Construction above and in contact with Intrinsic Support 1:31-48, 56-64: 2:37-46: 3:44-62; 4:19-23; 4:39-41; 4:65-5:8; Figs 2-3; App. No. 08/781,188, 8/1/97, Office Action, page 2. above and in contact with a second part of the substrate CMO Construction above and in contact with Intrinsic Support 1:35-38, 1:42-44, 1:44-48, 2:37-40, 2:42-44, 3:44-47, 3:56-60; Figs. la-lf, 2a-2e, 3 above and in contact with a second part of the substrate AUO Construction Produced above, supported by, and in contact with Intrinsic Support E.g., Figs. 3, 4, & 5; 4:464:64; 4:65-5:5; 5:23-38; 5:39-54 Produced above, supported by, and in contact with a second portion of the substrate Intrinsic Support E.g., Figs. 3, 4, & 5; 4:464:64; 4:65-5:5; 5:23-38; 5:39-54

formed on a second portion of said substrate

C

Intrinsic Support 1:31-48, 56-64: 2:37-46: 3:44-62; 4:19-23; 4:39-41; 4:65-5:8; Figs 2-3; App. No. 08/781,188, 8/1/97, Office Action, page 2.

Intrinsic Support 1:35-38, 3:44-47; Figs. 2b, 3

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT C LG DISPLAY USP 5,825,449 Claim Terms formed on a first portion of said first insulative layer Des. C LGD Construction above and in contact with a first part of the first insulative layer Intrinsic Support 1:31-48, 56-64: 2:37-46: 3:44-62; 4:19-23; 4:39-41; 4:65-5:8; Figs 2-3; App. No. 08/781,188, 8/1/97, Office Action, page 2. a thickness of nonconductive material (such as SiNx) that has high electrical resistance Intrinsic Support 1:40-42; 2:5-9, 2:40-41, 4551, 61-62; 3:1-8, 50-54; 4:6-12, 27-34, 47-50; 5:1-2, 8-15; Figs. 1-3. CMO Construction above and in contact with a first part of the first insulative layer Intrinsic Support 1:42-44; Figs. 2b, 3, 5 AUO Construction Produced above, supported by, and in contact with a first portion of the first insulative layer Intrinsic Support E.g., Figs. 3, 4, & 5; 4:464:64; 5:6-5:15; 5:23-38; 5:39-54 Plain meaning

insulative layer

C

Plain meaning

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT C LG DISPLAY USP 5,825,449 Claim Terms formed on said second conductive layer and on a second portion of said first insulative layer overlying said first conductive layer Des. C LGD Construction above and in contact with the second conductive layer and above and in contact with a second part of the first insulative layer above the first conductive layer Intrinsic Support 1:31-48, 56-64: 2:37-46: 3:44-62; 4:19-23; 4:39-41; 4:65-5:8; Figs 2-3; App. No. 08/781,188, 8/1/97, Office Action, page 2. above CMO Construction above and in contact with the second conductive layer and above and in contact with a second part of the first insulative layer above the first conductive layer Intrinsic Support Figs. 1f, 2d, 3 (e.g., element 9) AUO Construction Produced above, supported by, and in contact with the second conductive layer and a second portion of the insulative layer covering the top surface of the first conductive layer Intrinsic Support E.g., Figs. 3, 4, & 5; 4:464:64; 5:6-5:15; 5:23-38; 5:39-54 Covering the top surface of

overlying

C

this term should be construed as part of the larger term ("formed on said second conductive layer and on a second portion of said first insulative layer overlying said first conductive layer") Intrinsic Support 1:40-44; Fig. lb

Intrinsic Support 1:40-44; 2:37-55; 3:63-4:15; 5:16-22; Figs 1-3.

Intrinsic Support E.g., Figs. 3, 4, & 5; 4:464:64; 5:6-5:15; 5:23-38; 5:39-54

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT C LG DISPLAY USP 5,825,449 Claim Terms contact hole Des. C LGD Construction an opening in one or more insulative layers to expose a portion of a conductive layer for purposes of forming an electrical connection. Intrinsic Support 1:51-2:10; 2:31-3:14; 3:504:41; 4:47-5:47; Figs. 1-3. provided through C the contact hole is formed in the layer Intrinsic Support 1:51-2:10; 2:31-3:14; 3:504:41; 4:47-5:47; Figs. 1-3. expose part of said ... layer C removing portions of one or more layers to uncover at least part of another layer Intrinsic Support 1:52-60; 2:5-10, 17-28, 4555; 3:1-14, 3:66-4:15; 4:3539, 46-50; 5:8-22; Figs. 1-3; Abstract. plain meaning Plain meaning CMO Construction an opening formed in one or more insulative layers to expose a portion of a conductive layer for purposes of forming an electrical connection Intrinsic Support 2:46-55, 3:2-14, 4: 8-15, 4: 53-64, 5:8-13, 5:19-22, 5:33-36; Figs. 2d-2e, 3 and 5 plain meaning See above AUO Construction Plain meaning

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT C LG DISPLAY USP 5,825,449 Claim Terms extends through Des. C LGD Construction is disposed in Intrinsic Support 1:50-60; 2:36-3:15; 4:16-34; 4:47-64; 5:5-23; Figs 1-3. one, but not both, of the first and second conductive layers is directly connected to one terminal of a thin film transistor CMO Construction plain meaning AUO Construction Plain meaning

one of said first and second conductive layers is connected to one of a plurality of terminals of a thin film transistor

C A

the first conductive layer is connected to the gate, source or drain of a thin film transistor, and/or the second conductive layer is connected to the gate, source or drain of the thin film transistor Intrinsic Support 2:16-28, 4:1-5; 4:65-5:13; 5:16-22; 5:23-39; 5:40-51, Figs. 3, 4, 5; `449 File history, 8/1/97 Office Action, para. 6; `449 File history, 12/1/1997 Amendment & Response, pages 1-7; Claims 2, 6; Specification pages 16-17.

At least one of the first and second conductive layers is electrically connected to at least one of the source, drain, and gate electrodes of a thin film transistor.

Intrinsic Support 1:24-30; 2:31-3:15; 3:634:5; 4:46-5:23; Fig 3; App. No. 08/781,188, 12/1/1997, Amendment, at p. 5-7.

Intrinsic Support E.g., Figs. 3, 4, & 5; 4:465:53; 5:23-53 App 08/781,188, 12/01/97 Response, pg. 1-7

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT C LG DISPLAY USP 5,825,449 Claim Terms one of said first and second conductive layers Des. C LGD Construction one, but not both, of the first and second conductive layers Intrinsic Support 4:46-5:23; Fig 3; App. No. 08/781,188, 12/1/1997, Amendment, at p. 5-7. one L a single layer Intrinsic Support 4:46-5:23; Fig 3; App. No. 08/781,188, 12/1/1997, Amendment, at p. 5-7. connected to C A directly connected to Intrinsic Support 1:24-30; 2:31-3:15; 3:634:5; 4:46-5:23; Fig 3; App. No. 08/781,188, 12/1/1997, Amendment, at p. 5-7. CMO Construction this term should be construed as part of the larger term "one of said first and second conductive layers is connected to one of a plurality of terminals of a thin film transistor" AUO Construction At least one of the first and second conductive layers Intrinsic Support E.g., Figs. 3, 4, & 5; 4:465:53; 5:23-53 App 08/781,188, 12/01/97 Response, pg. 1-7 Plain meaning Intrinsic Support E.g., Figs. 3, 4, & 5; 4:465:53; 5:23-53 App 08/781,188, 12/01/97 Response, pg. 1-7 Electrically connected to Intrinsic Support E.g., Figs. 3, 4 & 5; 4:465:53; 5:23-53

this term should be construed as part of the larger term "one of said first and second conductive layers is connected to one of a plurality of terminals of a thin film transistor" plain meaning

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT C LG DISPLAY USP 5,825,449 Claim Terms one of a plurality of terminals of a thin film transistor Des. L LGD Construction one of the terminals (i.e., source, drain, or gate) of a thin film transistor Intrinsic Support 4:46-5:23; Fig 3; App. No. 08/781,188, 12/1/1997, Amendment, at p. 5-7. a plurality of terminals of a thin film transistor C the terminals (i.e., source, drain, or gate) of a thin film transistor Intrinsic Support 4:46-5:23; Fig 3; App. No. 08/781,188, 12/1/1997, Amendment, at p. 5-7. CMO Construction this term should be construed as part of the larger term "one of said first and second conductive layers is connected to one of a plurality of terminals of a thin film transistor" AUO Construction At least one of the source, gate, and drain electrodes of a thin film transistor Intrinsic Support E.g., Figs. 3, 4, & 5; 4:465:53; 5:23-53 App 08/781,188, 12/01/97 Response, pg. 1-7 Source, drain, and gate electrodes of a thin film transistor Intrinsic Support E.g., Figs. 3, 4, & 5; 4:465:53; 5:23-53 App 08/781,188, 12/01/97 Response, pg. 1-7

this term should be construed as part of the larger term "one of said first and second conductive layers is connected to one of a plurality of terminals of a thin film transistor" to the extent that the embedded term "terminals of a thin film transistor" needs to be construed, CMO proposes the following construction: the gate, source, and drain of a thin film transistor `449 File history, 12/1/1997 Amendment & Response, page 5

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JOINT CLAIM CONSTRUCTION STATEMENT - EXHIBIT C LG DISPLAY USP 5,825,449 Claim Terms thin film transistor Des. C LGD Construction A three terminal device in which the current flow through one pair of terminals, the source and drain, is controlled or modulated by an electric field that penetrates the semiconductor; this field is introduced by a voltage applied at the third terminal, the gate, which is separated from the semiconductor by an insulating layer. The thin-film transistor is formed using thin-film techniques on an insulating substrate rather than in a single crystal silicon wafer Intrinsic Support 1:22-33; Figs 1-3; App. No. 08/781,188, 12/1/1997, Amendment, at p. 5-7. CMO Construction A three terminal semi¬conductor device in which the current flow through one pair of terminals, the source and drain, is controlled or modulated by an electric field that penetrates the semiconductor; this field is introduced by a voltage applied at the third terminal, the gate, which is separated from the semi-conductor by an insulating layer. The thinfilm transistor is formed using thin-film techniques on an insulating substrate rather than in a single crystal silicon wafer. In