Free Appendix - District Court of Delaware - Delaware

Case 1:06-cv-00726-JJF

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Moving back to the lab, the next step will be to understand in molecular detail where survival pathways and chemotherapy agents intersect.
Frank McCormick is at the Comprehensive Cancer Center, University of California, San Francisco, Box 0128, 2340 Sutter Street, San Francisco, California 94143, USA. e-mail: [email protected]
1. Wendel, H.-G. et al. Nature 428, 332­337 (2004).

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2. Vivanco, I. & Sawyers, C. L. Nature Rev. Cancer 2, 489­501 (2002). 3. Basu, S., Totty, N. F., Irwin, M. S., Sudol, M. & Downward, J. Mol. Cell 11, 11­23 (2003). 4. Manning, B. D. & Cantley, L. C. Trends Biochem. Sci. 28, 573­576 (2003). 5. Neshat, M. S. et al. Proc. Natl Acad. Sci. USA 98, 10314­10319 (2001). 6. Lin, T. A. et al. Science 266, 653­656 (1994). 7. Pause, A. et al. Nature 371, 762­767 (1994). 8. Li, S. et al. J. Biol. Chem. 278, 3015­3022 (2003). 9. Topisirovic, I. et al. Mol. Cell. Biol. 23, 8992­9002 (2003).

Semiconductor physics

Quick-set thin films
Mercouri G. Kanatzidis Transistors that have active components based on thin films, rather than silicon, are attractive for many applications. The latest thin-film fabrication technique has the potential for industrial-scale production.

T

he original working transistor, invented at Bell Labs in the 1940s, was based on semiconducting germanium and had a junction (sandwich) configuration. But by the 1960s, this design had given way to the simpler field-effect transistor -- in particular, the silicon-based MOSFET (for metal-oxide-semiconductor field-effect transistor). A typical computer processor today contains around 42 million such transistors, and demand for ever-faster computers is only increasing. As a result, the market is pushing for a downsizing of transistor technology. However,certain applications (such as flatpanel displays) require larger-area transistors than can normally be created using siliconbased devices. Thin-film semiconductors have been explored as an alternative, although with limited success. But now it seems that the large-scale, low-cost fabrication of such devices is a step closer: on page 299 of this issue, Mitzi et al.1 describe a chemical-deposition method for producing uniform films of the chalcogenides SnS2 or SnSe2 for use in thin-film transistors (TFTs). The resulting TFTs support large current densities (more than 105 A cm 2), and mobilities greater than 10 cm2 V 1 s 1 -- almost ten times larger than achieved for semiconducting films formed using the spin-coating technique (in which a solution on a substrate is spun rapidly,causing the film to spread outwards). In a TFT, the thin film (usually silicon) is the active current-carrying layer (Fig.1).The film sits on a substrate, which is usually glass owing to its low cost, high optical transparency and compatibility with conventional semiconductor processing technology. Recently, however, plastic has emerged as a viable challenger because of its additional flexibility, although the development of TFT technology for use with plastic substrates is still in its infancy.

Electrons in Metal contact

Electrons out Gate voltage

Thin-film semiconductor Drain Source Insulator Gate Substrate

Figure 1 Cross-section of a thin-film transistor. A voltage applied at the gate controls the flow of electrons (resistance) from the source to the drain; a positive gate voltage attracts electrons to the bottom surface of the semiconductor layer and creates a conduction channel. When a voltage difference is applied between the two connector wires, electrons enter at one end (the source) and exit at the other (the drain), resulting in a current along the channel. Mitzi et al.1 have now come up with a chemicaldeposition method that produces uniform films of the chalcogenide SnSe2 for use in thin-film transistors.

Transistors for high-performance display applications should have high electron mobilities, low leakage currents and low threshold voltages. But processing temperatures must also be low (below 150 C) if the transistors are to be compatible with low-cost plastic substrate materials. So the emphasis in developing large-scale TFTs has been on low-temperature deposition and the exploration of materials other than amorphous silicon. Approaches include vacuum deposition2 (suitable for growing ultrathin organic films and multilayer structures), solution-deposition technologies3 (suitable for inorganic materials), and many others4. But these are generally not highthroughput processes. Although spin-coated semiconductor films have suffered from low mobilities5­7, this technique shows much promise.
©2004 Nature Publishing Group

The attraction of using inorganic semiconductors lies in their stability, thermal robustness and high mobilities. The metal chalcogenides, for example, are excellent candidates for use in TFT technologies. They form a large class of compounds that are composed of one or more metals plus one of the chalcogen atoms such as sulphur, selenium or tellurium. Moreover, the energy required to delocalize a charge carrier (the energy gap)8 in these materials is suitable for room-temperature devices, and can be further tuned for a given application9. Mitzi et al.1 describe a means of creating chalcogenide active layers for TFTs through spin coating. Their continuous, uniform, ultrathin semiconducting films are only a few unit cells thick. The key to the fabrication chemistry is hydrazine (N2H4), which Mitzi et al. use as a solvent. When metal and chalcogens dissolve in hydrazine, they form chalcogenometallate solutions containing anions such as [Sn2S6]4 , as well as hydrazinium cations (N2H5)+. These solutions can be used as precursors for spin-coating thin films of the salt (N2H5)4[Sn2S6], which then decompose to the binary metal chalcogenide at low temperature. The advantage of having hydrazinium cations, and not some other organic cations10, is that they readily and cleanly react with the counterion of [Sn2S6]4 to give continuous, crystalline semiconducting films as thin as 5 nanometres. It is this simple chemistry that not only makes the work of Mitzi et al.1 attractive, but probably technologically significant as well. Thin films produced by deposition from solution have so far been moderately successful in terms of their mobilities11­13, but the techniques are generally not suitable for high throughput. This hydrazine-based process can be applied more generally, and the hydrazinium salts need not be isolated first -- they can be made in situ.If the process can be optimized and scaled up,thin films for high-performance channel layers in TFTs could be fabricated with all the processing performed at 300 C.In principle,depending on the specific metal chalcogenide involved, the films could be made at even lower temperatures. However, the current processing temperature is too high for many applications (such as those using plastic substrates), and the mobilities achieved, although much higher than reported for other techniques, may not yet be adequate for many devices. Furthermore, the source and gate voltages of the TFTs are higher than those of typical silicon-based devices, while little is known about the yield and reproducibility of these devices. And the substrate is still silicon, not glass or plastic, which will limit the fabrication of TFTs on large-area, low-cost substrates. So there are several factors to be considered before a new generation of optoelectronic devices based on this deposition
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technology could gain a foothold, including the long-term operational and environmental stability of the devices. But, given the relative youth of this technology,and the exciting and rapid advances anticipated using chalcogenide thin films, the goal does not seem unattainable. Continued work in this area is likely to contribute to our understanding and exploitation of these exciting materials well into the next century.
Mercouri G. Kanatzidis is in the Department of Chemistry, Michigan State University, East Lansing, Michigan 48824, USA. e-mail: [email protected]
1. Mitzi, D. B., Kosbar, L. L., Murray, C. E., Copel, M. & Afzali, A. Nature 428, 299­303 (2004). 2. Forrest, S. R. Chem. Rev. 97, 1793­1896 (1997).

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3. Sirringhaus, H. et al. Science 290, 2123­2126 (2000). 4. Duan, X. et al. Nature 425, 274­278 (2003). 5. Waldauf, C., Schilinsky, P., Perisutti, M., Hauch, J. & Brabec, C. J. Adv. Mater. 15, 2084­2088 (2003). 6. Babel, A. & Jenekhe, S. A. J. Am. Chem. Soc. 125, 13656­13657 (2003). 7. Meth, J. S., Zane, S. G., Sharp, K. G. & Agrawal, S. Thin Solid Films 444, 227­234 (2003). 8. Kanatzidis, M. G. & Sutorik, A. C. Prog. Inorg. Chem. 43, 151­265 (1995). 9. Enos, A. A. III, Liao, J.-H., Pikramenou, Z. & Kanatzidis, M. G. Chem. Eur. J. 2, 656­666 (1996). 10. Dhingra, S. S. & Kanatzidis, M. G. Mater. Res. Soc. Symp. Proc. 180, 825­831 (1990). 11. Gan, F. Y. & Shih, I. IEEE Trans. Electron Devices 49, 15­18 (2002). 12. Yamaguchi, K., Yoshida, T., Sugiura, T. & Minoura, H. J. Phys. Chem. B 102, 9677­9686 (1998). 13. Sankapal, B. R., Mane, R. S. & Lokhande, C. D. Mater. Res. Bull. 35, 177­184 (2000).

a
HGF

TGF-

?

TGF-

Stromal fibroblast (+ TGF- type II receptor)

b

TGF-

?

HGF

TGF-

Stromal fibroblast (­ TGF- type II receptor)

Cancer

Dangerous liaisons
Allan Balmain and Rosemary J. Akhurst The cells of multicellular organisms are highly communicative and so can strongly influence one another's behaviour. One line of communication is particularly important in keeping cell growth in check.
single cell destined to become a tissue or an organism can't go it alone in its rise to such dizzy heights. Communication,in the form of direct contacts between cells, interactions between cells and their surroundings, or the transmission of biochemical signals, is essential. Unravelling these networks of communication has provided gainful employment for biologists, geneticists and mathematicians in their quest to understand how the body forms1. But now cancer biologists are being drawn into a similar web of interactions between cells targeted to become tumours (usually epithelial cells) and their neighbours (stromal fibroblasts). A network of signals operates in tumours. As they describe in Science, Bhowmick et al.2 have identified one signalling pathway -- regulated by transforming growth factor (TGF- ) -- that is an important mediator of the stromal­epithelial interactions modulating the growth of solid tumours. It has been known3 for some years that normal stromal cells inhibit tumour growth whereas tumour-associated stromal cells stimulate it (Fig. 1). In their study, Bhowmick et al.2 deleted the receptor for TGF- -- the TGF- type II receptor -- specifically in stromal cells of otherwise normal mice.This`selective knockout' avoided killing the animals by deleting the TGF- type II receptor in every cell type, completely inhibiting signalling through this pathway in the stroma of several tissues. Surprisingly, although the deletion occurs in the skin, oesophagus, kidney, liver and lung, mice were born normally, and these tissues showed no observable adverse effects.

A

Not everything, however, escaped unscathed. Prostate tissue underwent increased stromal-cell division, growing excessively by the time the animals were three weeks old. This, in turn, stimulated the epithelial cells of the prostate to divide and form lesions that resembled prostatic intraepithelial neoplasia, a probable forerunner of prostate cancer. The stromal-cell population in the animals' forestomach also proliferated more rapidly, in this case spurring the expansion of the epithelial population so that an invasive form of cancer occurred that killed the mice by the time they were seven weeks old. So not only does abrogation of TGF- signalling in the stromal fibroblasts cause them to proliferate, but the ensuing perturbed communication with the epithelial cells causes dysregulated cell division, indirectly leading to cancerous growth. What causes this? Perhaps the stromal cells that cannot respond to TGF- instead release other factors, or greater amounts of certain factors than do normal stromal cells? Bhowmick et al.2 suggest that it might be due to another growth factor, hepatocyte growth factor (HGF), acting through its receptor c-Met (Fig. 1). The HGF­c-Met regulatory system is important in proliferation, cell migration and metastasis -- the movement of cancer cells to other parts of the body to establish more tumours4. Impressively, fibroblasts from both the forestomach and prostate tissues of the knockout mice secreted at least three times as much HGF as their normal counterparts, and c-Met was simultaneously activated in the proliferating epithelial cells of the forestomach tumours.
©2004 Nature Publishing Group

Figure 1 Cellular relationships. a, Normal communications between epithelial cells and their fibroblast neighbours. Both epithelial cells and fibroblasts secrete transforming growth factor (TGF- ), which suppresses growth. Stromal fibroblasts might also secrete other factors that inhibit epithelial-cell growth (denoted by ?). A small amount of hepatocyte growth factor (HGF; its receptor is c-Met) secreted by the stroma inhibits stromal-cell growth and also that of epithelial cells. b, Perturbed signalling in the absence of the receptor for TGF- , the TGF- type II receptor. Inhibition of TGF- signalling in stromal cells prevents growth-inhibitory responses to TGFand stimulates the stroma to release higher levels of HGF, a positive growth and metastatic factor. The production of other growth-inhibitory factors (?) might be reduced in response to inhibition of TGF- signalling. TGF- receptors are shown in black, c-Met receptors in red.

These data are consistent with previous reports that TGF- normally inhibits HGF synthesis in stromal cells5. But they don't reflect the situation in advanced skin cancer, in which tumour-derived TGF- induces adjacent stromal cells to produce HGF6. The study by Bhowmick and colleagues has uncovered insights into cellular liaisons within tissues that should benefit cancer researchers and developmental biologists alike. But several issues raised by the findings must first be resolved. The cells of most solid tumours secrete large amounts of TGF- , but are insensitive to its growth-inhibitory effects. This means either that components of this signalling pathway have mutated or, as is more common, that the growth response has been reduced while the ability to migrate, invade and metastasize in response to TGFis retained. How, then, do stromal cells normally escape the growth-inhibitory effects of overexpressed TGF- and become willing partners in fostering epithelial tumour progression? Possible answers are genetic changes, or changes in gene expression that occur without altering the DNA sequence.
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Document 385-4

Filed 08/12/2008

Page 17 of 60

Exhibit B-2, Page 389

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 18 of 60

Exhibit B-2, Page 390

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 19 of 60

Exhibit B-2, Page 391

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 20 of 60

EXHIBIT B-3

0.0 01

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 21 of 60

Exhibit B-3, Page 392

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 22 of 60

Exhibit B-3, Page 393

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 23 of 60

Exhibit B-3, Page 394

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 24 of 60

Exhibit B-3, Page 395

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 25 of 60

Exhibit B-3, Page 396

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 26 of 60

Exhibit B-3, Page 397

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 27 of 60

Exhibit B-3, Page 398

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 28 of 60

Exhibit B-3, Page 399

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 29 of 60

Exhibit B-3, Page 400

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 30 of 60

Exhibit B-3, Page 401

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 31 of 60

Exhibit B-3, Page 402

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 32 of 60

Exhibit B-3, Page 403

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 33 of 60

Exhibit B-3, Page 404

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 34 of 60

Exhibit B-3, Page 405

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 35 of 60

Exhibit B-3, Page 406

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 36 of 60

Exhibit B-3, Page 407

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 37 of 60

Exhibit B-3, Page 408

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 38 of 60

Exhibit B-3, Page 409

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 39 of 60

Exhibit B-3, Page 410

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 40 of 60

Exhibit B-3, Page 411

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 41 of 60

Exhibit B-3, Page 412

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 42 of 60

Exhibit B-3, Page 413

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 43 of 60

Exhibit B-3, Page 414

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 44 of 60

Exhibit B-3, Page 415

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 45 of 60

Exhibit B-3, Page 416

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 46 of 60

Exhibit B-3, Page 417

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 47 of 60

Exhibit B-3, Page 418

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 48 of 60

Exhibit B-3, Page 419

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 49 of 60

Exhibit B-3, Page 420

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 50 of 60

Exhibit B-3, Page 421

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 51 of 60

Exhibit B-3, Page 422

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 52 of 60

Exhibit B-3, Page 423

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 53 of 60

Exhibit B-3, Page 424

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 54 of 60

EXHIBIT B-4

0.0 01

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 55 of 60

Exhibit B-4, Page 425

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 56 of 60

Exhibit B-4, Page 426

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 57 of 60

EXHIBIT B-5

0.0 01

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 58 of 60

Exhibit B-5, Page 427

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 59 of 60

Exhibit B-5, Page 428

Case 1:06-cv-00726-JJF

Document 385-4

Filed 08/12/2008

Page 60 of 60

Exhibit B-5, Page 429

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 1 of 165

EXHIBIT C-2

0.0 01

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 2 of 165

Exhibit C-2, Page 430

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 3 of 165

Exhibit C-2, Page 431

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 4 of 165

Exhibit C-2, Page 432

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 5 of 165

Exhibit C-2, Page 433

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 6 of 165

EXHIBIT C-3

0.0 01

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 7 of 165

Exhibit C-3, Page 434

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 8 of 165

Exhibit C-3, Page 435

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 9 of 165

Exhibit C-3, Page 436

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 10 of 165

Exhibit C-3, Page 437

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 11 of 165

Exhibit C-3, Page 438

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 12 of 165

Exhibit C-3, Page 439

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 13 of 165

Exhibit C-3, Page 440

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 14 of 165

Exhibit C-3, Page 441

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 15 of 165

EXHIBIT C-4

0.0 01

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 16 of 165

Exhibit C-4, Page 442

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 17 of 165

Exhibit C-4, Page 443

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 18 of 165

Exhibit C-4, Page 444

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 19 of 165

Exhibit C-4, Page 445

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 20 of 165

Exhibit C-4, Page 446

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 21 of 165

Exhibit C-4, Page 447

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 22 of 165

Exhibit C-4, Page 448

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 23 of 165

Exhibit C-4, Page 449

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 24 of 165

Exhibit C-4, Page 450

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 25 of 165

Exhibit C-4, Page 451

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 26 of 165

Exhibit C-4, Page 452

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 27 of 165

EXHIBIT C-5

0.0 01

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 28 19 Page 1 ofof 165

Exhibit C-5, Page 453

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 29 19 Page 2 ofof 165

Exhibit C-5, Page 454

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 30 19 Page 3 ofof 165

Exhibit C-5, Page 455

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 31 19 Page 4 ofof 165

Exhibit C-5, Page 456

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 32 19 Page 5 ofof 165

Exhibit C-5, Page 457

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 33 19 Page 6 ofof 165

Exhibit C-5, Page 458

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 34 19 Page 7 ofof 165

Exhibit C-5, Page 459

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 35 19 Page 8 ofof 165

Exhibit C-5, Page 460

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 36 19 Page 9 ofof 165

Exhibit C-5, Page 461

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 10 of 19 Page 37 of 165

Exhibit C-5, Page 462

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 11 of 19 Page 38 of 165

Exhibit C-5, Page 463

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 12 of 19 Page 39 of 165

Exhibit C-5, Page 464

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 13 of 19 Page 40 of 165

Exhibit C-5, Page 465

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 14 of 19 Page 41 of 165

Exhibit C-5, Page 466

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 15 of 19 Page 42 of 165

Exhibit C-5, Page 467

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 16 of 19 Page 43 of 165

Exhibit C-5, Page 468

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 17 of 19 Page 44 of 165

Exhibit C-5, Page 469

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 18 of 19 Page 45 of 165

Exhibit C-5, Page 470

Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5

Page 19 of 19 Page 46 of 165

Exhibit C-5, Page 471

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 47 of 165

EXHIBIT C-6

0.0 01

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 48 of 165

Exhibit C-6, Page 472

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 49 of 165

Exhibit C-6, Page 473

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 50 of 165

Exhibit C-6, Page 474

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 51 of 165

Exhibit C-6, Page 475

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 52 of 165

Exhibit C-6, Page 476

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 53 of 165

Exhibit C-6, Page 477

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 54 of 165

Exhibit C-6, Page 478

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 55 of 165

Exhibit C-6, Page 479

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 56 of 165

Exhibit C-6, Page 480

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 57 of 165

Exhibit C-6, Page 481

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 58 of 165

Exhibit C-6, Page 482

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 59 of 165

Exhibit C-6, Page 483

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 60 of 165

Exhibit C-6, Page 484

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 61 of 165

Exhibit C-6, Page 485

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 62 of 165

Exhibit C-6, Page 486

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 63 of 165

Exhibit C-6, Page 487

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 64 of 165

Exhibit C-6, Page 488

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 65 of 165

Exhibit C-6, Page 489

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 66 of 165

Exhibit C-6, Page 490

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 67 of 165

Exhibit C-6, Page 491

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 68 of 165

Exhibit C-6, Page 492

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 69 of 165

Exhibit C-6, Page 493

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 70 of 165

Exhibit C-6, Page 494

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 71 of 165

Exhibit C-6, Page 495

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 72 of 165

Exhibit C-6, Page 496

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 73 of 165

Exhibit C-6, Page 497

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 74 of 165

Exhibit C-6, Page 498

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 75 of 165

Exhibit C-6, Page 499

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 76 of 165

Exhibit C-6, Page 500

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 77 of 165

Exhibit C-6, Page 501

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 78 of 165

Exhibit C-6, Page 502

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 79 of 165

Exhibit C-6, Page 503

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 80 of 165

Exhibit C-6, Page 504

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 81 of 165

Exhibit C-6, Page 505

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 82 of 165

Exhibit C-6, Page 506

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 83 of 165

Exhibit C-6, Page 507

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 84 of 165

Exhibit C-6, Page 508

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 85 of 165

Exhibit C-6, Page 509

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 86 of 165

Exhibit C-6, Page 510

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 87 of 165

Exhibit C-6, Page 511

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 88 of 165

Exhibit C-6, Page 512

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 89 of 165

Exhibit C-6, Page 513

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 90 of 165

Exhibit C-6, Page 514

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 91 of 165

Exhibit C-6, Page 515

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 92 of 165

Exhibit C-6, Page 516

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 93 of 165

Exhibit C-6, Page 517

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 94 of 165

Exhibit C-6, Page 518

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 95 of 165

Exhibit C-6, Page 519

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 96 of 165

Exhibit C-6, Page 520

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 97 of 165

Exhibit C-6, Page 521

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 98 of 165

Exhibit C-6, Page 522

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 99 of 165

Exhibit C-6, Page 523

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 100 of 165

Exhibit C-6, Page 524

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 101 of 165

Exhibit C-6, Page 525

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 102 of 165

Exhibit C-6, Page 526

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 103 of 165

Exhibit C-6, Page 527

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 104 of 165

Exhibit C-6, Page 528

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 105 of 165

Exhibit C-6, Page 529

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 106 of 165

Exhibit C-6, Page 530

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 107 of 165

Exhibit C-6, Page 531

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 108 of 165

Exhibit C-6, Page 532

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 109 of 165

Exhibit C-6, Page 533

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 110 of 165

Exhibit C-6, Page 534

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 111 of 165

Exhibit C-6, Page 535

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 112 of 165

Exhibit C-6, Page 536

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 113 of 165

Exhibit C-6, Page 537

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 114 of 165

Exhibit C-6, Page 538

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 115 of 165

Exhibit C-6, Page 539

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 116 of 165

Exhibit C-6, Page 540

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 117 of 165

Exhibit C-6, Page 541

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 118 of 165

Exhibit C-6, Page 542

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 119 of 165

Exhibit C-6, Page 543

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 120 of 165

Exhibit C-6, Page 544

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 121 of 165

Exhibit C-6, Page 545

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 122 of 165

Exhibit C-6, Page 546

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 123 of 165

Exhibit C-6, Page 547

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 124 of 165

Exhibit C-6, Page 548

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 125 of 165

Exhibit C-6, Page 549

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 126 of 165

Exhibit C-6, Page 550

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

Page 127 of 165

Exhibit C-6, Page 551

Case 1:06-cv-00726-JJF

Document 385-5

Filed 08/12/2008

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Exhibit C-6, Page 552

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EXHIBIT C-7

0.0 01

Case 2:02-cv-06775-CBM-JTL Document Case 1:06-cv-00726-JJF Document 385-5 1289 Filed 10/19/2006 Page 1of 165 Filed 08/12/2008 Page 154 of 2

Exhibit C-7, Page 577

Case 2:02-cv-06775-CBM-JTL Document Case 1:06-cv-00726-JJF Document 385-5 1289 Filed 10/19/2006 Page 2of 165 Filed 08/12/2008 Page 155 of 2

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EXHIBIT C-8

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KELL M. DAMSGAARD admitted uo hac vice) MORGAN, LEWIS & BO KIUS L P 1701 Market Street Philadel hia, PA 19103-2921 Tel: 21?963.5000 Fax: 215.963.5001

d

P

DANIEL JOHNSON JR. (SBN 57409 MORGAN, LEWIS & BOCKIUS LL One Market, Spear Street Tower

d

Attorne s for Plaintiff and Counterclaim Defendant ~ ~ . ~ h i $ s Co., Ltd. LCD UNITED STATES DISTRICT COURT CENTRAL DISTRICT OF CALIFORNIA LG.PHILIPS LCD CO., Ltd., Plaintiff,
VS.

I Case No. 02-6775 CBM (JTLx)
Related Case Nos. CV-03-2866 CBM, V-03-2884 CBM CV-03-2885 CBM and CV-03-2886 ~ B M ]

L

TATUNG CO. OF AMERICA, et al., Defendants. AND COUNTERCLAIMS

Judge: Hon. Consuelo B. Marshall Courtroom: 2 Date: March 12, 2007 Time: 10:OO am

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PUBLIC VERSION
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TABLE OF CONTENTS
.. TABLE OF AUTHORITIES............ ...................................................................... 11

I.

INTRODUCTION .................................................................................. 1 LEGAL STANDARD ................................................................................ 1

X. I

m.

ARGUMENT ...............................................................................................
A.

2

THE UNDISPUTED FACTS COMPEL A FINDING OF INFRINGEMENT OF CLAIMS 10 AND 11 OF THE '449 PATENT ............................................................................................

2

B.

DEFENDANTS' ARGUMENTS THAT THEIR PRODUCTS DO NOT CONTAIN A FIRST METAL SOURCE PAD ARE BASED ON IRRELEVANT OR NON-EXISTENT EVIDENCE ......4

IV.

CONCLUSION ............................................................................................ 6

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TABLE OF AUTHORITIES FEDERAL CASES
Anderson v. Liberty Lobby, Inc., 477 U.S. 242 (1986)............................................ 2 Cybor COT. v. FAS Techs., Inc., 138 F.3d 1448 (Fed. Cir. 1998) .......................... 1 Gentry Gallery, Inc. v. Berkline C o p , 134 F.3d 1473 (Fed. Cir. 1998) ................. 2

FEDERAL STATUTES Fed. R. Civ. P. 50(a)........................................................................................... 2 1,

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I.

INTRODUCTION

Pursuant to Federal Rule of Civil Procedure I ("LG.Philipsw) renews its motion for judgment as aSO@), LG.Philips LCD Co., Ltd. matter of law that defendants infringe claims 10 and 11 of U.S. Patent No. 5,825,449 ("the '449 patent"), Roth Decl., Ex. 1. On November 21,2006, the jury returned a verdict that defendants willfully infringe claim 1 of both the '449 and '737 patents. However, the jury found that claims 10 and 11 of the '449 patent were not infringed. Notwithstanding this verdict, and as requested in LG.Philips' November 8 motion for judgment as a matter of law (Docket Entry 1426), the Court should enter judgment of infi-ingement on these claims. Mingement analysis involves two steps. Fitst, the claims are construed by the court. Cybor Corp. v. FAS Techs., Inc., 138 F.3d 1448, 1454 (Fed. Cir. 1998) (en banc). Second, the properly construed claims are compared to the accused device to determine infringement. Id. Here, the Court construed claims 10 and 11. When this construction is applied to defendants' products, there is plain and indisputable infringement. At trial, defendants did not contest that they used virtually all of the features of claims 10 and 11. Defendants' purported "defense" was that their products did not include the "source pad" required by the claims. However, defendants' expert admitted that the accused products include a structure with each of the features required by the Court's construction of "source pad." Hence, the undisputed evidence compels a conclusion of infringement.l

11.

LEGAL STANDARD
A motion for judgment as a matter of law made prior to the case being

submitted to the jury may be renewed after the verdict pursuant to Federal Rule of
-

References to the Trial Transcript ("Trial Tr.") in this memorandum, as well memoranda, are collected as a single exhibit to the as LG.Philips' other ~ost-verdict Declaration of DavidM. Morris in Support of Post-Verdict Motions of LG.Philips LCD Co., Ltd.

'

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Civil Procedure 50(b). Such motions may be granted against a party if "the court finds that a reasonable jury would not have a legally sufficient evidentiary basis to find for the party on that issue." Fed. R. Civ. P. 50(a).

m.

ARGUMENT
A.

THE UNDISPUTED FACTS COMPEL A FINDING OF
INFRINGEMENT OF CLAIMS 10 AND 11 OF THE '449 PATENT

LG.Philips' renewed motion turns on a narrow issue - whether the accused products include the "source pad" recited in claims 10 and 11 of the '449 patent.2 The relevant facts - i.e., the structure of the "source pad" - are not in dispute and, therefore, the issue is amenable to resolution on motion for judgment as a matter of law. See Anderson v. Liberty Lobby, Inc., 477 U.S. 242,248 and 250 (1986);
Gentry Gallery, Znc. v. Berkline Corp., 134 F.3d 1473, 1476 (Fed. Cir. 1998)

("Because there is no dispute concerning the structure of the accused device, our infringement analysis involves only claim construction, a question of law . . . ."). Claim 10 calls for a "first conductive layer" that includes a "source pad," and claim 11 similarly calls for "patterning said first conductive layer to form . . . a source pad." Defendants admit that their products include a "source pad," but dispute that the "source pad" is in the "first conductive layer." Instead, they Defendants also argued that the accused products do not include two other claim limitations: i.e., the "first contact hole ... exposin said source pad" limitation and the "transparent conductive layer elecmca y c o ~ e c t i n said source ad with said source electrode via said first contact hole and said fo contact Eoles.9 limitation. However, as defendants acknowledge, these arguments are de ndent upon the "first conductive la er" not containin a "source pad." CPT &L Motion at 6:3-12, Nov. 9,2006, ocket Entry 1419. If the "fust conductive layer" in defendants' products includes the "source pad" identified by LG.Philips, then these limitations are satisfied. Defendants did not contest the remaining limitations - the testimon of Dr. Rubloff, LG.Philips' ex ert, is unrebutted. See, e . g , Trial Tr. at 1183:22-1186:17, 1193:6-1193:16, 1194:$-1195:14. Moreover defendants eventually conceded that they imported into the United States or sold or offered for sale in the United States accused roducts, (id. at 927:6-9285, 929:18931:13. 1837:24-1842:6: Roth Decl.. Exs. 2- ): and the iurv necessarilv found that defendants induced infringement of the '449 patent. ~ s result,aif the-accused ~ products include the "source pad" limitation, then defendants infringe.

'

5

&

6

8

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1

I

contend that the material LG.Philips identifies as the flrst conductive layer "source pad" is a The structure in question is illustrated below in red as the
I

1

"First Metal ~ a ~ e r . " '

The Court's construction of "source pad" - an issue of law - resolves the dispute. The jury was instructed that "source pad" means "a portion of a patterned, electrically conductive material that is provided near the periphery of the thin film transistor array to receive data from a data driving circuit." Roth Decl., Ex. 10. There is no dispute that the accused products include a material in the
- i.e., the material shown in red in the above illustration - meeting this

definition. LG.Philips' expert, Dr. Rubloff, testified that this is so. Trial Tr. at

1182:13-1183:21, 1187:8-15, 1188:17-25, 1190:4-23, 1193:17-1194:11, 3102:193 111:18, and 3 119:5-3130:7. Defendants' expert concurred. He admitted that the
portion of the illustrated above: is patterned, id. at 2792:17-19; is electrically conductive, id. at 2792:17-19;

is provided near the periphery of the TFT array, id. at 2793:lO-14;

3 -

This illustration is taken from defendants' and their expert's demonstratives used at trial. Trial Tr. at 1982:5-15 and 2687%-18.

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receives a voltage (i.e.,"data")' from the source driver, id. at 1996:1014 and 2800:2-5; and receives a current, id. at 2801:4-5. In short, Defendants' expert admitted that the first metal identified by LG.Philips includes each feature required by the Court's definition of "source pad.' Therefore, the undisputed facts demonstrate that the accused products include the "source pad" recited in claims 10 and 11 of the '449 patent. Judgment of infringement of claims 10 and 11 should be entered.

B.

DEFENDANTS' ARGUMENTS THAT THEIR PRODUCTS DO NOT CONTAIN A FIRST METAL SOURCE PAD ARE BASED ON IRRELEVANT OR NON-EXISTENT EVIDENCE

Defendants presented two arguments why the accused products allegedly do not include the claimed "source pad." The first argument is based upon irrelevant evidence; the second on imaginary evidence. First, defendants argued that the "source pad" is a But the name allegedly used to describe the first metal in CPT's products has no bearing on whether the piece of metal meets the Court's definition of "source pad." If it did, then infringement could easily be avoided merely by assigning names to the electrical components different from those used in the patent. The undisputed evidence - including the admissions from defendants' expert - demonstrates that the first metal identified by LG.Philips in the accused products includes each of the features described by the Court. Indeed, the metal is labeled as part of the "Source"

in CPT' s engineering documents. See, e.g., Roth Decl., Exs. 11 and 12.
Second, defendants argued that no "data" is received by the relevant portion of the first metal and, therefore, it cannot be a source pad. This argument is

*

Defendants' expert testified by deposition in 2005 that the "data" from the data drivin circuit is represented as a voltage. Trial Tr. at 2794:Z-2795%: 2795:24-~$96:17.

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contrary to the undisputed facts. As illustrated below, the data driving circuit, which applies the "data," Trial Tr. at 2793:21-23, is electrically connected to
I

3 4

the second metal layer. Defendants concede that this second metal layer receives data - they refer to the second metal layer shown below as the source pad, which by definition receives data. Id. at 26885-15. Hence, because the first metal layer is

1

5
6
7
I

9

"source pad") receives virtually the same voltage kom the data driving circuit as the second metal layer. Trial Tr. at 2799:12-2800:s. Mr. Hsu, the only CPT engineer called by defendants at trial, also admitted that
Id. at 1996:ll-14. Defendants' expert also admitted in his

deposition in 2005 that he agrees with LG.Philips' expert, Dr. Rubloff, that voltage represents data. Id. at 2794:2-2795:8, 2795:24-2796: 17. At trial defendants' expert attempted to backtrack from this admission, arguing that current also was needed.
Id. at 2793:24-2794: 1,2795:13-22, 2796: 16-21. However, on cross-examination

he conceded that the

also received current. Id. at 2801:4-5.

I

In short, the first metal layer illustrated above receives the same data The portion of the first metal !ayer ide~tified LG.Phi!ips ~ e e t the CO:L~~'S by s definition of solurce n d r--.

I

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IV.

CONCLUSION
For the foregoing reasons, LG.Philips requests that the Court enter judgment

as a matter of law that defendants infringe claims 10 and 11 of the '449 patent. Dated:

January 16, 2007

MORGAN, LEWIS & BOCKIUS LLP

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.PRACTICAL INTEGRATED CIRCUIT FABRICATION

Edited by: ICE Staff

INTEGRATED CIRCUIT ENGINEERING CORPORATION

15022 N. 75th Street · Scottsdale. Arizona 85260 Tel: 602-998-9780 · Telex: 165-755 ICESCOT

Exhibit T-3, Page 624

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INTEGRATED CIRCUIT ENGINEERING CORPORATION

Copyright

©

Integrated Circuit Engineering Corporation, 1984.

The information on devices or arrangements contained in this text may be covered by patents. The disclosure of any information herein.does not convey any license and no liability for patent infringement arising out of the information is assumed. The information and data contained herein have been compiled from government and non-government technical reports and from material supplied by various manufacturers and are intended to be used for reference purposes. ICE does not warrant the accuracy of this information and data. The user is further cautioned that the data contained herein may not be used in lieu of other contractually cited references and specifications. All rights reserved. No parts of this publication may be reproduced in any form, or by any means without permission in writing from Integrated Circuit Engineering Corporation, 15022 N. 75th Street, Scottsdale, Arizona 85260.

Exhibit T-3, Page 625

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INTEGRATED CIRCUIT ENGINEERING CORPORATION

Ultrasonic Bonding

A bonding technique which utilizes ultrasonic energy and pressure to form the bond. Refers to FET devices where current passes only through one type of semiconductor material (P or N) as it flows from input to output. A vacuum process, usually less than 10- 10 Torr (mm of Hg), where metal(s) are vaporized through thermal agitation, then recrystallized on cooler surfaces, generally the material to be coated. Also referred to as evaporation. A path filled with conducting material between circuit layers. Very Large-Scale Integration. ICs that contain 5,000 or more gate equivaleots or more than 16,000 bits of memory. Electron potential in an electrical wire or circuit. Usually expressed.in volts (V). A thin disk of semiconducting material (usually silicon) on which many separate chips can be fabricated and then cut into individual ICs. See Bonding, Wedge. Joining of two or more pieces of metal by fusing them together. Masks printed from master plates that are used for production exposure of wafers. As these plates are subject to wear, they must be replaced periodically. The room in which wafers are exposed to ultraviolet light in an aligner. Fluorescent lights in the room have yellow filter tubes around them to block unwanted ultraviolet light from that source. Yield is the ratio of the number of acceptable units to the maximum number possible. Zero-I nsertion Force Socket. A socket in which package leads are readily accepted by the socket, then firmly connected through cam action.

Unipolar

Vapor Plating

Via VLSI

Voltage

Wafer

Wedge Bonding Welding Working Plates

Yellow Room

Yield

ZIF Socket

16-18

Exhibit T-3, Page 626

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EXHIBIT W-2

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