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EXHIBIT A-2
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Moving back to the lab, the next step will be to understand in molecular detail where survival pathways and chemotherapy agents intersect.
Frank McCormick is at the Comprehensive Cancer Center, University of California, San Francisco, Box 0128, 2340 Sutter Street, San Francisco, California 94143, USA. e-mail: [email protected]
1. Wendel, H.-G. et al. Nature 428, 332337 (2004).
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2. Vivanco, I. & Sawyers, C. L. Nature Rev. Cancer 2, 489501 (2002). 3. Basu, S., Totty, N. F., Irwin, M. S., Sudol, M. & Downward, J. Mol. Cell 11, 1123 (2003). 4. Manning, B. D. & Cantley, L. C. Trends Biochem. Sci. 28, 573576 (2003). 5. Neshat, M. S. et al. Proc. Natl Acad. Sci. USA 98, 1031410319 (2001). 6. Lin, T. A. et al. Science 266, 653656 (1994). 7. Pause, A. et al. Nature 371, 762767 (1994). 8. Li, S. et al. J. Biol. Chem. 278, 30153022 (2003). 9. Topisirovic, I. et al. Mol. Cell. Biol. 23, 89929002 (2003).
Semiconductor physics
Quick-set thin films
Mercouri G. Kanatzidis Transistors that have active components based on thin films, rather than silicon, are attractive for many applications. The latest thin-film fabrication technique has the potential for industrial-scale production.
T
he original working transistor, invented at Bell Labs in the 1940s, was based on semiconducting germanium and had a junction (sandwich) configuration. But by the 1960s, this design had given way to the simpler field-effect transistor -- in particular, the silicon-based MOSFET (for metal-oxide-semiconductor field-effect transistor). A typical computer processor today contains around 42 million such transistors, and demand for ever-faster computers is only increasing. As a result, the market is pushing for a downsizing of transistor technology. However,certain applications (such as flatpanel displays) require larger-area transistors than can normally be created using siliconbased devices. Thin-film semiconductors have been explored as an alternative, although with limited success. But now it seems that the large-scale, low-cost fabrication of such devices is a step closer: on page 299 of this issue, Mitzi et al.1 describe a chemical-deposition method for producing uniform films of the chalcogenides SnS2 or SnSe2 for use in thin-film transistors (TFTs). The resulting TFTs support large current densities (more than 105 A cm 2), and mobilities greater than 10 cm2 V 1 s 1 -- almost ten times larger than achieved for semiconducting films formed using the spin-coating technique (in which a solution on a substrate is spun rapidly,causing the film to spread outwards). In a TFT, the thin film (usually silicon) is the active current-carrying layer (Fig.1).The film sits on a substrate, which is usually glass owing to its low cost, high optical transparency and compatibility with conventional semiconductor processing technology. Recently, however, plastic has emerged as a viable challenger because of its additional flexibility, although the development of TFT technology for use with plastic substrates is still in its infancy.
Electrons in Metal contact
Electrons out Gate voltage
Thin-film semiconductor Drain Source Insulator Gate Substrate
Figure 1 Cross-section of a thin-film transistor. A voltage applied at the gate controls the flow of electrons (resistance) from the source to the drain; a positive gate voltage attracts electrons to the bottom surface of the semiconductor layer and creates a conduction channel. When a voltage difference is applied between the two connector wires, electrons enter at one end (the source) and exit at the other (the drain), resulting in a current along the channel. Mitzi et al.1 have now come up with a chemicaldeposition method that produces uniform films of the chalcogenide SnSe2 for use in thin-film transistors.
Transistors for high-performance display applications should have high electron mobilities, low leakage currents and low threshold voltages. But processing temperatures must also be low (below 150 C) if the transistors are to be compatible with low-cost plastic substrate materials. So the emphasis in developing large-scale TFTs has been on low-temperature deposition and the exploration of materials other than amorphous silicon. Approaches include vacuum deposition2 (suitable for growing ultrathin organic films and multilayer structures), solution-deposition technologies3 (suitable for inorganic materials), and many others4. But these are generally not highthroughput processes. Although spin-coated semiconductor films have suffered from low mobilities57, this technique shows much promise.
©2004 Nature Publishing Group
The attraction of using inorganic semiconductors lies in their stability, thermal robustness and high mobilities. The metal chalcogenides, for example, are excellent candidates for use in TFT technologies. They form a large class of compounds that are composed of one or more metals plus one of the chalcogen atoms such as sulphur, selenium or tellurium. Moreover, the energy required to delocalize a charge carrier (the energy gap)8 in these materials is suitable for room-temperature devices, and can be further tuned for a given application9. Mitzi et al.1 describe a means of creating chalcogenide active layers for TFTs through spin coating. Their continuous, uniform, ultrathin semiconducting films are only a few unit cells thick. The key to the fabrication chemistry is hydrazine (N2H4), which Mitzi et al. use as a solvent. When metal and chalcogens dissolve in hydrazine, they form chalcogenometallate solutions containing anions such as [Sn2S6]4 , as well as hydrazinium cations (N2H5)+. These solutions can be used as precursors for spin-coating thin films of the salt (N2H5)4[Sn2S6], which then decompose to the binary metal chalcogenide at low temperature. The advantage of having hydrazinium cations, and not some other organic cations10, is that they readily and cleanly react with the counterion of [Sn2S6]4 to give continuous, crystalline semiconducting films as thin as 5 nanometres. It is this simple chemistry that not only makes the work of Mitzi et al.1 attractive, but probably technologically significant as well. Thin films produced by deposition from solution have so far been moderately successful in terms of their mobilities1113, but the techniques are generally not suitable for high throughput. This hydrazine-based process can be applied more generally, and the hydrazinium salts need not be isolated first -- they can be made in situ.If the process can be optimized and scaled up,thin films for high-performance channel layers in TFTs could be fabricated with all the processing performed at 300 C.In principle,depending on the specific metal chalcogenide involved, the films could be made at even lower temperatures. However, the current processing temperature is too high for many applications (such as those using plastic substrates), and the mobilities achieved, although much higher than reported for other techniques, may not yet be adequate for many devices. Furthermore, the source and gate voltages of the TFTs are higher than those of typical silicon-based devices, while little is known about the yield and reproducibility of these devices. And the substrate is still silicon, not glass or plastic, which will limit the fabrication of TFTs on large-area, low-cost substrates. So there are several factors to be considered before a new generation of optoelectronic devices based on this deposition
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technology could gain a foothold, including the long-term operational and environmental stability of the devices. But, given the relative youth of this technology,and the exciting and rapid advances anticipated using chalcogenide thin films, the goal does not seem unattainable. Continued work in this area is likely to contribute to our understanding and exploitation of these exciting materials well into the next century.
Mercouri G. Kanatzidis is in the Department of Chemistry, Michigan State University, East Lansing, Michigan 48824, USA. e-mail: [email protected]
1. Mitzi, D. B., Kosbar, L. L., Murray, C. E., Copel, M. & Afzali, A. Nature 428, 299303 (2004). 2. Forrest, S. R. Chem. Rev. 97, 17931896 (1997).
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3. Sirringhaus, H. et al. Science 290, 21232126 (2000). 4. Duan, X. et al. Nature 425, 274278 (2003). 5. Waldauf, C., Schilinsky, P., Perisutti, M., Hauch, J. & Brabec, C. J. Adv. Mater. 15, 20842088 (2003). 6. Babel, A. & Jenekhe, S. A. J. Am. Chem. Soc. 125, 1365613657 (2003). 7. Meth, J. S., Zane, S. G., Sharp, K. G. & Agrawal, S. Thin Solid Films 444, 227234 (2003). 8. Kanatzidis, M. G. & Sutorik, A. C. Prog. Inorg. Chem. 43, 151265 (1995). 9. Enos, A. A. III, Liao, J.-H., Pikramenou, Z. & Kanatzidis, M. G. Chem. Eur. J. 2, 656666 (1996). 10. Dhingra, S. S. & Kanatzidis, M. G. Mater. Res. Soc. Symp. Proc. 180, 825831 (1990). 11. Gan, F. Y. & Shih, I. IEEE Trans. Electron Devices 49, 1518 (2002). 12. Yamaguchi, K., Yoshida, T., Sugiura, T. & Minoura, H. J. Phys. Chem. B 102, 96779686 (1998). 13. Sankapal, B. R., Mane, R. S. & Lokhande, C. D. Mater. Res. Bull. 35, 177184 (2000).
a
HGF
TGF-
?
TGF-
Stromal fibroblast (+ TGF- type II receptor)
b
TGF-
?
HGF
TGF-
Stromal fibroblast ( TGF- type II receptor)
Cancer
Dangerous liaisons
Allan Balmain and Rosemary J. Akhurst The cells of multicellular organisms are highly communicative and so can strongly influence one another's behaviour. One line of communication is particularly important in keeping cell growth in check.
single cell destined to become a tissue or an organism can't go it alone in its rise to such dizzy heights. Communication,in the form of direct contacts between cells, interactions between cells and their surroundings, or the transmission of biochemical signals, is essential. Unravelling these networks of communication has provided gainful employment for biologists, geneticists and mathematicians in their quest to understand how the body forms1. But now cancer biologists are being drawn into a similar web of interactions between cells targeted to become tumours (usually epithelial cells) and their neighbours (stromal fibroblasts). A network of signals operates in tumours. As they describe in Science, Bhowmick et al.2 have identified one signalling pathway -- regulated by transforming growth factor (TGF- ) -- that is an important mediator of the stromalepithelial interactions modulating the growth of solid tumours. It has been known3 for some years that normal stromal cells inhibit tumour growth whereas tumour-associated stromal cells stimulate it (Fig. 1). In their study, Bhowmick et al.2 deleted the receptor for TGF- -- the TGF- type II receptor -- specifically in stromal cells of otherwise normal mice.This`selective knockout' avoided killing the animals by deleting the TGF- type II receptor in every cell type, completely inhibiting signalling through this pathway in the stroma of several tissues. Surprisingly, although the deletion occurs in the skin, oesophagus, kidney, liver and lung, mice were born normally, and these tissues showed no observable adverse effects.
A
Not everything, however, escaped unscathed. Prostate tissue underwent increased stromal-cell division, growing excessively by the time the animals were three weeks old. This, in turn, stimulated the epithelial cells of the prostate to divide and form lesions that resembled prostatic intraepithelial neoplasia, a probable forerunner of prostate cancer. The stromal-cell population in the animals' forestomach also proliferated more rapidly, in this case spurring the expansion of the epithelial population so that an invasive form of cancer occurred that killed the mice by the time they were seven weeks old. So not only does abrogation of TGF- signalling in the stromal fibroblasts cause them to proliferate, but the ensuing perturbed communication with the epithelial cells causes dysregulated cell division, indirectly leading to cancerous growth. What causes this? Perhaps the stromal cells that cannot respond to TGF- instead release other factors, or greater amounts of certain factors than do normal stromal cells? Bhowmick et al.2 suggest that it might be due to another growth factor, hepatocyte growth factor (HGF), acting through its receptor c-Met (Fig. 1). The HGFc-Met regulatory system is important in proliferation, cell migration and metastasis -- the movement of cancer cells to other parts of the body to establish more tumours4. Impressively, fibroblasts from both the forestomach and prostate tissues of the knockout mice secreted at least three times as much HGF as their normal counterparts, and c-Met was simultaneously activated in the proliferating epithelial cells of the forestomach tumours.
©2004 Nature Publishing Group
Figure 1 Cellular relationships. a, Normal communications between epithelial cells and their fibroblast neighbours. Both epithelial cells and fibroblasts secrete transforming growth factor (TGF- ), which suppresses growth. Stromal fibroblasts might also secrete other factors that inhibit epithelial-cell growth (denoted by ?). A small amount of hepatocyte growth factor (HGF; its receptor is c-Met) secreted by the stroma inhibits stromal-cell growth and also that of epithelial cells. b, Perturbed signalling in the absence of the receptor for TGF- , the TGF- type II receptor. Inhibition of TGF- signalling in stromal cells prevents growth-inhibitory responses to TGFand stimulates the stroma to release higher levels of HGF, a positive growth and metastatic factor. The production of other growth-inhibitory factors (?) might be reduced in response to inhibition of TGF- signalling. TGF- receptors are shown in black, c-Met receptors in red.
These data are consistent with previous reports that TGF- normally inhibits HGF synthesis in stromal cells5. But they don't reflect the situation in advanced skin cancer, in which tumour-derived TGF- induces adjacent stromal cells to produce HGF6. The study by Bhowmick and colleagues has uncovered insights into cellular liaisons within tissues that should benefit cancer researchers and developmental biologists alike. But several issues raised by the findings must first be resolved. The cells of most solid tumours secrete large amounts of TGF- , but are insensitive to its growth-inhibitory effects. This means either that components of this signalling pathway have mutated or, as is more common, that the growth response has been reduced while the ability to migrate, invade and metastasize in response to TGFis retained. How, then, do stromal cells normally escape the growth-inhibitory effects of overexpressed TGF- and become willing partners in fostering epithelial tumour progression? Possible answers are genetic changes, or changes in gene expression that occur without altering the DNA sequence.
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Filed 08/12/2008
Page 18 of 60
Exhibit B-2, Page 390
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 19 of 60
Exhibit B-2, Page 391
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 20 of 60
EXHIBIT B-3
0.0 01
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 21 of 60
Exhibit B-3, Page 392
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 22 of 60
Exhibit B-3, Page 393
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 23 of 60
Exhibit B-3, Page 394
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 24 of 60
Exhibit B-3, Page 395
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 25 of 60
Exhibit B-3, Page 396
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 26 of 60
Exhibit B-3, Page 397
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 27 of 60
Exhibit B-3, Page 398
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 28 of 60
Exhibit B-3, Page 399
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 29 of 60
Exhibit B-3, Page 400
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 30 of 60
Exhibit B-3, Page 401
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 31 of 60
Exhibit B-3, Page 402
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 32 of 60
Exhibit B-3, Page 403
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 33 of 60
Exhibit B-3, Page 404
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 34 of 60
Exhibit B-3, Page 405
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 35 of 60
Exhibit B-3, Page 406
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 36 of 60
Exhibit B-3, Page 407
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 37 of 60
Exhibit B-3, Page 408
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 38 of 60
Exhibit B-3, Page 409
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 39 of 60
Exhibit B-3, Page 410
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 40 of 60
Exhibit B-3, Page 411
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 41 of 60
Exhibit B-3, Page 412
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 42 of 60
Exhibit B-3, Page 413
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 43 of 60
Exhibit B-3, Page 414
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 44 of 60
Exhibit B-3, Page 415
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 45 of 60
Exhibit B-3, Page 416
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 46 of 60
Exhibit B-3, Page 417
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 47 of 60
Exhibit B-3, Page 418
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 48 of 60
Exhibit B-3, Page 419
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 49 of 60
Exhibit B-3, Page 420
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 50 of 60
Exhibit B-3, Page 421
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 51 of 60
Exhibit B-3, Page 422
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 52 of 60
Exhibit B-3, Page 423
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 53 of 60
Exhibit B-3, Page 424
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 54 of 60
EXHIBIT B-4
0.0 01
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 55 of 60
Exhibit B-4, Page 425
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 56 of 60
Exhibit B-4, Page 426
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 57 of 60
EXHIBIT B-5
0.0 01
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 58 of 60
Exhibit B-5, Page 427
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 59 of 60
Exhibit B-5, Page 428
Case 1:06-cv-00726-JJF
Document 385-4
Filed 08/12/2008
Page 60 of 60
Exhibit B-5, Page 429
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 1 of 165
EXHIBIT C-2
0.0 01
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 2 of 165
Exhibit C-2, Page 430
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 3 of 165
Exhibit C-2, Page 431
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 4 of 165
Exhibit C-2, Page 432
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 5 of 165
Exhibit C-2, Page 433
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 6 of 165
EXHIBIT C-3
0.0 01
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 7 of 165
Exhibit C-3, Page 434
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 8 of 165
Exhibit C-3, Page 435
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 9 of 165
Exhibit C-3, Page 436
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 10 of 165
Exhibit C-3, Page 437
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 11 of 165
Exhibit C-3, Page 438
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 12 of 165
Exhibit C-3, Page 439
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 13 of 165
Exhibit C-3, Page 440
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 14 of 165
Exhibit C-3, Page 441
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 15 of 165
EXHIBIT C-4
0.0 01
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 16 of 165
Exhibit C-4, Page 442
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 17 of 165
Exhibit C-4, Page 443
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 18 of 165
Exhibit C-4, Page 444
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 19 of 165
Exhibit C-4, Page 445
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 20 of 165
Exhibit C-4, Page 446
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 21 of 165
Exhibit C-4, Page 447
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 22 of 165
Exhibit C-4, Page 448
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 23 of 165
Exhibit C-4, Page 449
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 24 of 165
Exhibit C-4, Page 450
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 25 of 165
Exhibit C-4, Page 451
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 26 of 165
Exhibit C-4, Page 452
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 27 of 165
EXHIBIT C-5
0.0 01
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 28 19 Page 1 ofof 165
Exhibit C-5, Page 453
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 29 19 Page 2 ofof 165
Exhibit C-5, Page 454
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 30 19 Page 3 ofof 165
Exhibit C-5, Page 455
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 31 19 Page 4 ofof 165
Exhibit C-5, Page 456
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 32 19 Page 5 ofof 165
Exhibit C-5, Page 457
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 33 19 Page 6 ofof 165
Exhibit C-5, Page 458
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 34 19 Page 7 ofof 165
Exhibit C-5, Page 459
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 35 19 Page 8 ofof 165
Exhibit C-5, Page 460
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 36 19 Page 9 ofof 165
Exhibit C-5, Page 461
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 10 of 19 Page 37 of 165
Exhibit C-5, Page 462
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 11 of 19 Page 38 of 165
Exhibit C-5, Page 463
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 12 of 19 Page 39 of 165
Exhibit C-5, Page 464
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 13 of 19 Page 40 of 165
Exhibit C-5, Page 465
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 14 of 19 Page 41 of 165
Exhibit C-5, Page 466
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 15 of 19 Page 42 of 165
Exhibit C-5, Page 467
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 16 of 19 Page 43 of 165
Exhibit C-5, Page 468
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 17 of 19 Page 44 of 165
Exhibit C-5, Page 469
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 18 of 19 Page 45 of 165
Exhibit C-5, Page 470
Case 2:02-cv-06775-CBM-JTL Document 526 Filed 08/12/2008 Filed 05/05/2005 Case 1:06-cv-00726-JJF Document 385-5
Page 19 of 19 Page 46 of 165
Exhibit C-5, Page 471
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 47 of 165
EXHIBIT C-6
0.0 01
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 48 of 165
Exhibit C-6, Page 472
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 49 of 165
Exhibit C-6, Page 473
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 50 of 165
Exhibit C-6, Page 474
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 51 of 165
Exhibit C-6, Page 475
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 52 of 165
Exhibit C-6, Page 476
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 53 of 165
Exhibit C-6, Page 477
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 54 of 165
Exhibit C-6, Page 478
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 55 of 165
Exhibit C-6, Page 479
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 56 of 165
Exhibit C-6, Page 480
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 57 of 165
Exhibit C-6, Page 481
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 58 of 165
Exhibit C-6, Page 482
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 59 of 165
Exhibit C-6, Page 483
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 60 of 165
Exhibit C-6, Page 484
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 61 of 165
Exhibit C-6, Page 485
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 62 of 165
Exhibit C-6, Page 486
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 63 of 165
Exhibit C-6, Page 487
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 64 of 165
Exhibit C-6, Page 488
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 65 of 165
Exhibit C-6, Page 489
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 66 of 165
Exhibit C-6, Page 490
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 67 of 165
Exhibit C-6, Page 491
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 68 of 165
Exhibit C-6, Page 492
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 69 of 165
Exhibit C-6, Page 493
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 70 of 165
Exhibit C-6, Page 494
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 71 of 165
Exhibit C-6, Page 495
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 72 of 165
Exhibit C-6, Page 496
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 73 of 165
Exhibit C-6, Page 497
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 74 of 165
Exhibit C-6, Page 498
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 75 of 165
Exhibit C-6, Page 499
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 76 of 165
Exhibit C-6, Page 500
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 77 of 165
Exhibit C-6, Page 501
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 78 of 165
Exhibit C-6, Page 502
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 79 of 165
Exhibit C-6, Page 503
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 80 of 165
Exhibit C-6, Page 504
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 81 of 165
Exhibit C-6, Page 505
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 82 of 165
Exhibit C-6, Page 506
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 83 of 165
Exhibit C-6, Page 507
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 84 of 165
Exhibit C-6, Page 508
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 85 of 165
Exhibit C-6, Page 509
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 86 of 165
Exhibit C-6, Page 510
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 87 of 165
Exhibit C-6, Page 511
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 88 of 165
Exhibit C-6, Page 512
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 89 of 165
Exhibit C-6, Page 513
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 90 of 165
Exhibit C-6, Page 514
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 91 of 165
Exhibit C-6, Page 515
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 92 of 165
Exhibit C-6, Page 516
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 93 of 165
Exhibit C-6, Page 517
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 94 of 165
Exhibit C-6, Page 518
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 95 of 165
Exhibit C-6, Page 519
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 96 of 165
Exhibit C-6, Page 520
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 97 of 165
Exhibit C-6, Page 521
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 98 of 165
Exhibit C-6, Page 522
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 99 of 165
Exhibit C-6, Page 523
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 100 of 165
Exhibit C-6, Page 524
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 101 of 165
Exhibit C-6, Page 525
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 102 of 165
Exhibit C-6, Page 526
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 103 of 165
Exhibit C-6, Page 527
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 104 of 165
Exhibit C-6, Page 528
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 105 of 165
Exhibit C-6, Page 529
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 106 of 165
Exhibit C-6, Page 530
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 107 of 165
Exhibit C-6, Page 531
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 108 of 165
Exhibit C-6, Page 532
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 109 of 165
Exhibit C-6, Page 533
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 110 of 165
Exhibit C-6, Page 534
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 111 of 165
Exhibit C-6, Page 535
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 112 of 165
Exhibit C-6, Page 536
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 113 of 165
Exhibit C-6, Page 537
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 114 of 165
Exhibit C-6, Page 538
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 115 of 165
Exhibit C-6, Page 539
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 116 of 165
Exhibit C-6, Page 540
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 117 of 165
Exhibit C-6, Page 541
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 118 of 165
Exhibit C-6, Page 542
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 119 of 165
Exhibit C-6, Page 543
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 120 of 165
Exhibit C-6, Page 544
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 121 of 165
Exhibit C-6, Page 545
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 122 of 165
Exhibit C-6, Page 546
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 123 of 165
Exhibit C-6, Page 547
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 124 of 165
Exhibit C-6, Page 548
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 125 of 165
Exhibit C-6, Page 549
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 126 of 165
Exhibit C-6, Page 550
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 127 of 165
Exhibit C-6, Page 551
Case 1:06-cv-00726-JJF
Document 385-5
Filed 08/12/2008
Page 128 of 165
Exhibit C-6, Page 552
Case 1:06-cv-00726-JJF
Document 385-5
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EXHIBIT C-7
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EXHIBIT C-8
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KELL M. DAMSGAARD admitted uo hac vice) MORGAN, LEWIS & BO KIUS L P 1701 Market Street Philadel hia, PA 19103-2921 Tel: 21?963.5000 Fax: 215.963.5001
d
P
DANIEL JOHNSON JR. (SBN 57409 MORGAN, LEWIS & BOCKIUS LL One Market, Spear Street Tower
d
Attorne s for Plaintiff and Counterclaim Defendant ~ ~ . ~ h i $ s Co., Ltd. LCD UNITED STATES DISTRICT COURT CENTRAL DISTRICT OF CALIFORNIA LG.PHILIPS LCD CO., Ltd., Plaintiff,
VS.
I Case No. 02-6775 CBM (JTLx)
Related Case Nos. CV-03-2866 CBM, V-03-2884 CBM CV-03-2885 CBM and CV-03-2886 ~ B M ]
L
TATUNG CO. OF AMERICA, et al., Defendants. AND COUNTERCLAIMS
Judge: Hon. Consuelo B. Marshall Courtroom: 2 Date: March 12, 2007 Time: 10:OO am
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PUBLIC VERSION
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TABLE OF CONTENTS
.. TABLE OF AUTHORITIES............ ...................................................................... 11
I.
INTRODUCTION .................................................................................. 1 LEGAL STANDARD ................................................................................ 1
X. I
m.
ARGUMENT ...............................................................................................
A.
2
THE UNDISPUTED FACTS COMPEL A FINDING OF INFRINGEMENT OF CLAIMS 10 AND 11 OF THE '449 PATENT ............................................................................................
2
B.
DEFENDANTS' ARGUMENTS THAT THEIR PRODUCTS DO NOT CONTAIN A FIRST METAL SOURCE PAD ARE BASED ON IRRELEVANT OR NON-EXISTENT EVIDENCE ......4
IV.
CONCLUSION ............................................................................................ 6
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TABLE OF AUTHORITIES FEDERAL CASES
Anderson v. Liberty Lobby, Inc., 477 U.S. 242 (1986)............................................ 2 Cybor COT. v. FAS Techs., Inc., 138 F.3d 1448 (Fed. Cir. 1998) .......................... 1 Gentry Gallery, Inc. v. Berkline C o p , 134 F.3d 1473 (Fed. Cir. 1998) ................. 2
FEDERAL STATUTES Fed. R. Civ. P. 50(a)........................................................................................... 2 1,
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I.
INTRODUCTION
Pursuant to Federal Rule of Civil Procedure I ("LG.Philipsw) renews its motion for judgment as aSO@), LG.Philips LCD Co., Ltd. matter of law that defendants infringe claims 10 and 11 of U.S. Patent No. 5,825,449 ("the '449 patent"), Roth Decl., Ex. 1. On November 21,2006, the jury returned a verdict that defendants willfully infringe claim 1 of both the '449 and '737 patents. However, the jury found that claims 10 and 11 of the '449 patent were not infringed. Notwithstanding this verdict, and as requested in LG.Philips' November 8 motion for judgment as a matter of law (Docket Entry 1426), the Court should enter judgment of infi-ingement on these claims. Mingement analysis involves two steps. Fitst, the claims are construed by the court. Cybor Corp. v. FAS Techs., Inc., 138 F.3d 1448, 1454 (Fed. Cir. 1998) (en banc). Second, the properly construed claims are compared to the accused device to determine infringement. Id. Here, the Court construed claims 10 and 11. When this construction is applied to defendants' products, there is plain and indisputable infringement. At trial, defendants did not contest that they used virtually all of the features of claims 10 and 11. Defendants' purported "defense" was that their products did not include the "source pad" required by the claims. However, defendants' expert admitted that the accused products include a structure with each of the features required by the Court's construction of "source pad." Hence, the undisputed evidence compels a conclusion of infringement.l
11.
LEGAL STANDARD
A motion for judgment as a matter of law made prior to the case being
submitted to the jury may be renewed after the verdict pursuant to Federal Rule of
-
References to the Trial Transcript ("Trial Tr.") in this memorandum, as well memoranda, are collected as a single exhibit to the as LG.Philips' other ~ost-verdict Declaration of DavidM. Morris in Support of Post-Verdict Motions of LG.Philips LCD Co., Ltd.
'
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Civil Procedure 50(b). Such motions may be granted against a party if "the court finds that a reasonable jury would not have a legally sufficient evidentiary basis to find for the party on that issue." Fed. R. Civ. P. 50(a).
m.
ARGUMENT
A.
THE UNDISPUTED FACTS COMPEL A FINDING OF
INFRINGEMENT OF CLAIMS 10 AND 11 OF THE '449 PATENT
LG.Philips' renewed motion turns on a narrow issue - whether the accused products include the "source pad" recited in claims 10 and 11 of the '449 patent.2 The relevant facts - i.e., the structure of the "source pad" - are not in dispute and, therefore, the issue is amenable to resolution on motion for judgment as a matter of law. See Anderson v. Liberty Lobby, Inc., 477 U.S. 242,248 and 250 (1986);
Gentry Gallery, Znc. v. Berkline Corp., 134 F.3d 1473, 1476 (Fed. Cir. 1998)
("Because there is no dispute concerning the structure of the accused device, our infringement analysis involves only claim construction, a question of law . . . ."). Claim 10 calls for a "first conductive layer" that includes a "source pad," and claim 11 similarly calls for "patterning said first conductive layer to form . . . a source pad." Defendants admit that their products include a "source pad," but dispute that the "source pad" is in the "first conductive layer." Instead, they Defendants also argued that the accused products do not include two other claim limitations: i.e., the "first contact hole ... exposin said source pad" limitation and the "transparent conductive layer elecmca y c o ~ e c t i n said source ad with said source electrode via said first contact hole and said fo contact Eoles.9 limitation. However, as defendants acknowledge, these arguments are de ndent upon the "first conductive la er" not containin a "source pad." CPT &L Motion at 6:3-12, Nov. 9,2006, ocket Entry 1419. If the "fust conductive layer" in defendants' products includes the "source pad" identified by LG.Philips, then these limitations are satisfied. Defendants did not contest the remaining limitations - the testimon of Dr. Rubloff, LG.Philips' ex ert, is unrebutted. See, e . g , Trial Tr. at 1183:22-1186:17, 1193:6-1193:16, 1194:$-1195:14. Moreover defendants eventually conceded that they imported into the United States or sold or offered for sale in the United States accused roducts, (id. at 927:6-9285, 929:18931:13. 1837:24-1842:6: Roth Decl.. Exs. 2- ): and the iurv necessarilv found that defendants induced infringement of the '449 patent. ~ s result,aif the-accused ~ products include the "source pad" limitation, then defendants infringe.
'
5
&
6
8
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1
I
contend that the material LG.Philips identifies as the flrst conductive layer "source pad" is a The structure in question is illustrated below in red as the
I
1
"First Metal ~ a ~ e r . " '
The Court's construction of "source pad" - an issue of law - resolves the dispute. The jury was instructed that "source pad" means "a portion of a patterned, electrically conductive material that is provided near the periphery of the thin film transistor array to receive data from a data driving circuit." Roth Decl., Ex. 10. There is no dispute that the accused products include a material in the
- i.e., the material shown in red in the above illustration - meeting this
definition. LG.Philips' expert, Dr. Rubloff, testified that this is so. Trial Tr. at
1182:13-1183:21, 1187:8-15, 1188:17-25, 1190:4-23, 1193:17-1194:11, 3102:193 111:18, and 3 119:5-3130:7. Defendants' expert concurred. He admitted that the
portion of the illustrated above: is patterned, id. at 2792:17-19; is electrically conductive, id. at 2792:17-19;
is provided near the periphery of the TFT array, id. at 2793:lO-14;
3 -
This illustration is taken from defendants' and their expert's demonstratives used at trial. Trial Tr. at 1982:5-15 and 2687%-18.
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receives a voltage (i.e.,"data")' from the source driver, id. at 1996:1014 and 2800:2-5; and receives a current, id. at 2801:4-5. In short, Defendants' expert admitted that the first metal identified by LG.Philips includes each feature required by the Court's definition of "source pad.' Therefore, the undisputed facts demonstrate that the accused products include the "source pad" recited in claims 10 and 11 of the '449 patent. Judgment of infringement of claims 10 and 11 should be entered.
B.
DEFENDANTS' ARGUMENTS THAT THEIR PRODUCTS DO NOT CONTAIN A FIRST METAL SOURCE PAD ARE BASED ON IRRELEVANT OR NON-EXISTENT EVIDENCE
Defendants presented two arguments why the accused products allegedly do not include the claimed "source pad." The first argument is based upon irrelevant evidence; the second on imaginary evidence. First, defendants argued that the "source pad" is a But the name allegedly used to describe the first metal in CPT's products has no bearing on whether the piece of metal meets the Court's definition of "source pad." If it did, then infringement could easily be avoided merely by assigning names to the electrical components different from those used in the patent. The undisputed evidence - including the admissions from defendants' expert - demonstrates that the first metal identified by LG.Philips in the accused products includes each of the features described by the Court. Indeed, the metal is labeled as part of the "Source"
in CPT' s engineering documents. See, e.g., Roth Decl., Exs. 11 and 12.
Second, defendants argued that no "data" is received by the relevant portion of the first metal and, therefore, it cannot be a source pad. This argument is
*
Defendants' expert testified by deposition in 2005 that the "data" from the data drivin circuit is represented as a voltage. Trial Tr. at 2794:Z-2795%: 2795:24-~$96:17.
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contrary to the undisputed facts. As illustrated below, the data driving circuit, which applies the "data," Trial Tr. at 2793:21-23, is electrically connected to
I
3 4
the second metal layer. Defendants concede that this second metal layer receives data - they refer to the second metal layer shown below as the source pad, which by definition receives data. Id. at 26885-15. Hence, because the first metal layer is
1
5
6
7
I
9
"source pad") receives virtually the same voltage kom the data driving circuit as the second metal layer. Trial Tr. at 2799:12-2800:s. Mr. Hsu, the only CPT engineer called by defendants at trial, also admitted that
Id. at 1996:ll-14. Defendants' expert also admitted in his
deposition in 2005 that he agrees with LG.Philips' expert, Dr. Rubloff, that voltage represents data. Id. at 2794:2-2795:8, 2795:24-2796: 17. At trial defendants' expert attempted to backtrack from this admission, arguing that current also was needed.
Id. at 2793:24-2794: 1,2795:13-22, 2796: 16-21. However, on cross-examination
he conceded that the
also received current. Id. at 2801:4-5.
I
In short, the first metal layer illustrated above receives the same data The portion of the first metal !ayer ide~tified LG.Phi!ips ~ e e t the CO:L~~'S by s definition of solurce n d r--.
I
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IV.
CONCLUSION
For the foregoing reasons, LG.Philips requests that the Court enter judgment
as a matter of law that defendants infringe claims 10 and 11 of the '449 patent. Dated:
January 16, 2007
MORGAN, LEWIS & BOCKIUS LLP
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.PRACTICAL INTEGRATED CIRCUIT FABRICATION
Edited by: ICE Staff
INTEGRATED CIRCUIT ENGINEERING CORPORATION
15022 N. 75th Street · Scottsdale. Arizona 85260 Tel: 602-998-9780 · Telex: 165-755 ICESCOT
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INTEGRATED CIRCUIT ENGINEERING CORPORATION
Copyright
©
Integrated Circuit Engineering Corporation, 1984.
The information on devices or arrangements contained in this text may be covered by patents. The disclosure of any information herein.does not convey any license and no liability for patent infringement arising out of the information is assumed. The information and data contained herein have been compiled from government and non-government technical reports and from material supplied by various manufacturers and are intended to be used for reference purposes. ICE does not warrant the accuracy of this information and data. The user is further cautioned that the data contained herein may not be used in lieu of other contractually cited references and specifications. All rights reserved. No parts of this publication may be reproduced in any form, or by any means without permission in writing from Integrated Circuit Engineering Corporation, 15022 N. 75th Street, Scottsdale, Arizona 85260.
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INTEGRATED CIRCUIT ENGINEERING CORPORATION
Ultrasonic Bonding
A bonding technique which utilizes ultrasonic energy and pressure to form the bond. Refers to FET devices where current passes only through one type of semiconductor material (P or N) as it flows from input to output. A vacuum process, usually less than 10- 10 Torr (mm of Hg), where metal(s) are vaporized through thermal agitation, then recrystallized on cooler surfaces, generally the material to be coated. Also referred to as evaporation. A path filled with conducting material between circuit layers. Very Large-Scale Integration. ICs that contain 5,000 or more gate equivaleots or more than 16,000 bits of memory. Electron potential in an electrical wire or circuit. Usually expressed.in volts (V). A thin disk of semiconducting material (usually silicon) on which many separate chips can be fabricated and then cut into individual ICs. See Bonding, Wedge. Joining of two or more pieces of metal by fusing them together. Masks printed from master plates that are used for production exposure of wafers. As these plates are subject to wear, they must be replaced periodically. The room in which wafers are exposed to ultraviolet light in an aligner. Fluorescent lights in the room have yellow filter tubes around them to block unwanted ultraviolet light from that source. Yield is the ratio of the number of acceptable units to the maximum number possible. Zero-I nsertion Force Socket. A socket in which package leads are readily accepted by the socket, then firmly connected through cam action.
Unipolar
Vapor Plating
Via VLSI
Voltage
Wafer
Wedge Bonding Welding Working Plates
Yellow Room
Yield
ZIF Socket
16-18
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