Free Appendix - District Court of Delaware - Delaware

Case 1:06-cv-00726-JJF

Document 389

Filed 08/12/2008

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Case 1:06-cv-00726-JJF

Document 389

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Document 389

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Case 1:06-cv-00726-JJF

Document 389-2

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EXHIBIT L-1

Case 1:06-cv-00726-JJF

Document 389-2

Filed 08/12/2008

Page 2 of 39

EX. L-1 LGD US PATENT NO. 5,019,002 INDEX OF DISPUTED TERMS CLAIM TERMS PAGE

substrate ......................................................................................................................................16 forming a pattern of pixels on said substrate ..............................................................................16 forming a plurality of row and column intersecting pixel activation lines .................................22 interconnecting substantially all of said row lines to one another and substantially all of said column lines to one another .............................................................1 interconnecting..............................................................................................................................1 substantially all .............................................................................................................................1 row lines......................................................................................................................................22 column lines ................................................................................................................................22 row and column lines ..................................................................................................................22 outer electrostatic discharge guard ring ........................................................................................1 resistance.......................................................................................................................................1 to provide protection from electrostatic discharges between said row and column activation lines during manufacture of the displays................................................24 protection from electrostatic discharges .....................................................................................24 row and column activation lines .................................................................................................22 removing said outer guard ring and row and column interconnections......................................33 removing .....................................................................................................................................33 inner electrostatic discharge guard ring ......................................................................................24 shunt switching elements ............................................................................................................16

-i-

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EXHIBIT L-1 U.S. PATENT NO. 5,019,002 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction interconnecting substantially all of said row lines to one another and substantially all of said column lines to one another - electrically connecting with conductive material all or nearly all row lines to at least one other row line and electrically connecting with conductive material all or nearly all of the column lines to at least one other column line interconnecting - electrically connecting with conductive material substantially all - all or nearly all outer electrostatic discharge guard ring ­ a closed or open ring, or open L or C-shaped line, outside the active matrix display to provide protection from electrostatic discharge resistance - a circuit component designed to provide opposition to electric current flowing through itself and to minimize current surge in the TFT array from electrostatic discharge

~

EX ____ 1

Case 1:06-cv-00726-JJF

Document 389-2

Filed 08/12/2008

Page 4 of 39

INTRINSIC EVIDENCE FOR DISPUTED TERM "INTERCONNECTING SUBSTANTIALLY ALL OF SAID ROW LINES TO ONE ANOTHER AND SUBSTANTIALLY ALL OF SAID COLUMN LINES TO ONE ANOTHER":

1:34-46

EX ____ 2

Case 1:06-cv-00726-JJF

Document 389-2

Filed 08/12/2008

Page 5 of 39

INTRINSIC EVIDENCE FOR DISPUTED TERM "INTERCONNECTING SUBSTANTIALLY ALL OF SAID ROW LINES TO ONE ANOTHER AND SUBSTANTIALLY ALL OF SAID COLUMN LINES TO ONE ANOTHER" (cont'd):

5:61-68

6:6-12

EX ____ 3

Case 1:06-cv-00726-JJF

Document 389-2

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Page 6 of 39

INTRINSIC EVIDENCE FOR DISPUTED TERM "INTERCONNECTING SUBSTANTIALLY ALL OF SAID ROW LINES TO ONE ANOTHER AND SUBSTANTIALLY ALL OF SAID COLUMN LINES TO ONE ANOTHER" (cont'd)

6:38-43

8:1-8

8:49-59

EX ____ 4

Case 1:06-cv-00726-JJF

Document 389-2

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Page 7 of 39

INTRINSIC EVIDENCE FOR DISPUTED TERM "INTERCONNECTING":

5:61-68

6:6-12

EX ____ 5

Case 1:06-cv-00726-JJF

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Page 8 of 39

INTRINSIC EVIDENCE FOR DISPUTED TERM "INTERCONNECTING" (cont'd):

8:1-8

Appl. No. 07/218,312, OA mailed 03/31/89, p. 3

Appl. No. 07/218,312, 07/12/1990 Proposed Response, p. 2

EX ____ 6

Case 1:06-cv-00726-JJF

Document 389-2

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Page 9 of 39

INTRINSIC EVIDENCE FOR DISPUTED TERM "INTERCONNECTING" (cont'd):

USP 4,803,536, 4:45-57

USP 4,803,536, 5:30-39

EX ____ 7

Case 1:06-cv-00726-JJF

Document 389-2

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INTRINSIC EVIDENCE FOR DISPUTED TERM "SUBSTANTIALLY ALL":

5:61-68

6:6-12

EX ____ 8

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INTRINSIC EVIDENCE FOR DISPUTED TERM "SUBSTANTIALLY ALL" (cont'd):

1:34-46

8:1-8

EX ____ 9

Case 1:06-cv-00726-JJF

Document 389-2

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INTRINSIC EVIDENCE FOR DISPUTED TERM "OUTER ELECTROSTATIC DISCHARGE GUARD RING":

4:46-58

EX ____ 10

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "OUTER ELECTROSTATIC DISCHARGE GUARD RING" (cont'd):

3:20-21

8:1-8

1:8-14

2:45-51

EX ____ 11

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INTRINSIC EVIDENCE FOR DISPUTED TERM "OUTER ELECTROSTATIC DISCHARGE GUARD RING" (cont'd):

2:61-68

7:11-21

8:26-34

8:49-57

EX ____ 12

Case 1:06-cv-00726-JJF

Document 389-2

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INTRINSIC EVIDENCE FOR DISPUTED TERM "RESISTANCE":

1:8-14

2:52-64

4:46-58

EX ____ 13

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INTRINSIC EVIDENCE FOR DISPUTED TERM "RESISTANCE" (cont'd):

5:33-43

7:14-18

7:35-46

7:61-68

EX ____ 14

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INTRINSIC EVIDENCE FOR DISPUTED TERM "RESISTANCE" (cont'd):

8:23-37

EXTRINSIC EVIDENCE FOR DISPUTED TERM "RESISTANCE":

"Resistance." Def. 4a. Merriam-Webster's Collegiate Dictionary. 10th ed. 1980

EX ____ 15

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EXHIBIT ___ U.S. PATENT NO. 5,019,002 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction substrate - the material (such as glass) upon which a transistor or integrated circuit is fabricated to provide mechanical support

~

forming a pattern of pixels on said substrate - depositing and etching a matrix of transparent electrically conductive material to form pixel electrodes above and supported by or in contact with the substrate ASSERTED CLAIM 8 shunt switching elements shunt transistors, including floating gate, no gate, an oxide below to form a spark gap, or other active switching elements such as diodes

1

Disputed Term "substrate" also appears in asserted claim 8 in the same context.

EX ____ 16

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INTRINSIC EVIDENCE FOR DISPUTED TERM "SUBSTRATE":

1:34-38

3:33-38

4:9-13

EX ____ 17

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "FORMING A PATTERN OF PIXELS ON SAID SUBSTRATE":

3:33-36

~
6:60-7:2

EX ____ 18

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Page 21 of 39

INTRINSIC EVIDENCE FOR DISPUTED TERM "FORMING A PATTERN OF PIXELS ON SAID SUBSTRATE" (cont'd):

1:34-46

1:52-55

3:47-57

4:20-23

4:38-45

EX ____ 19

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INTRINSIC EVIDENCE FOR DISPUTED TERM "FORMING A PATTERN OF PIXELS ON SAID SUBSTRATE" (cont'd):

5:24-32

8:49-59

EX ____ 20

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "SHUNT SWITCHING ELEMENTS":

7:29-34

8:55-62

EX ____ 21

Case 1:06-cv-00726-JJF

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EXHIBIT ___ U.S. PATENT NO. 5,019,002 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction forming a plurality of row and column intersecting pixel activation lines - depositing and etching electrically conductive material patterned in rows and columns that control pixels row lines ­ electrically conductive material patterned in rows that control pixels column lines - electrically conductive material patterned in columns that control pixels row and column lines electrically conductive material patterned in rows and columns that control pixels

~

ASSERTED CLAIM 8

row and column activation lines - electrically conductive material patterned in rows and columns that control pixels

EX ____ 22

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EVIDENCE FOR DISPUTED TERMS PERTAINING TO "ROW" AND "COLUMN LINES":

1:38-42

3:38-45

EX ____ 23

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EXHIBIT ___ U.S. PATENT NO. 5,019,002 TERMS IN DISPUTE
ASSERTED CLAIM 8 LGD's Claim Construction to provide protection from electrostatic discharges between said row and column activation lines during manufacture of the displays to minimize current surge in the TFT array from electrostatic discharge during manufacture of the display protection from electrostatic discharges - to minimize current surge in the TFT array from electrostatic discharge during manufacture of the display inner electrostatic discharge guard ring - a closed or open ring, or open L or C-shaped line, inside the source and/or gate pads to provide protection from electrostatic discharge

EX ____ 24

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "TO PROVIDE PROTECTION FROM ELECTROSTATIC DISCHARGES BETWEEN SAID ROW AND COLUMN ACTIVATION LINES DURING MANUFACTURE OF THE DISPLAYS":

1:8-14

2:45-51

2:52-64

EX ____ 25

Case 1:06-cv-00726-JJF

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Page 28 of 39

INTRINSIC EVIDENCE FOR DISPUTED TERM "TO PROVIDE PROTECTION FROM ELECTROSTATIC DISCHARGES BETWEEN SAID ROW AND COLUMN ACTIVATION LINES DURING MANUFACTURE OF THE DISPLAYS" (cont'd):

4:46-58

5:33-43

7:14-18

EX ____ 26

Case 1:06-cv-00726-JJF

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Page 29 of 39

INTRINSIC EVIDENCE FOR DISPUTED TERM "TO PROVIDE PROTECTION FROM ELECTROSTATIC DISCHARGES BETWEEN SAID ROW AND COLUMN ACTIVATION LINES DURING MANUFACTURE OF THE DISPLAYS" (cont'd):

8:23-37

EX ____ 27

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "PROTECTION FROM ELECTROSTATIC DISCHARGES":

1:8-14

2:45-51

2:52-64

EX ____ 28

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INTRINSIC EVIDENCE FOR DISPUTED TERM "PROTECTION FROM ELECTROSTATIC DISCHARGES" (cont'd):

4:46-58

5:33-43

7:14-18

EX ____ 29

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INTRINSIC EVIDENCE FOR DISPUTED TERM "PROTECTION FROM ELECTROSTATIC DISCHARGES" (cont'd):

8:23-37

EX ____ 30

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "INNER ELECTROSTATIC DISCHARGE GUARD RING":

~
6:60-7:2

EX ____ 31

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "INNER ELECTROSTATIC DISCHARGE GUARD RING" (cont'd)

5:33-43

7:11-22

8:49-57

EX ____ 32

Case 1:06-cv-00726-JJF

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EXHIBIT ___ U.S. PATENT NO. 5,019,002 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction

~

removing said outer guard ring and row and column interconnections- physically disconnecting said guard ring and row and column interconnections

removing ­ physically disconnecting said guard ring and row and column interconnections

EX ____ 33

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "REMOVING SAID OUTER GUARD RING AND ROW AND COLUMN INTERCONNECTIONS":

8:11-16

8:40-48

EX ____ 34

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "REMOVING SAID OUTER GUARD RING AND ROW AND COLUMN INTERCONNECTIONS" (cont'd):

2:62-68

8:27-30

8:40-48

Appl. No. 07/218,312, 07/12/1990 Proposed Response, p. 2

EX ____ 35

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INTRINSIC EVIDENCE FOR DISPUTED TERM "REMOVING":

8:11-16

8:40-48

EX ____ 36

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INTRINSIC EVIDENCE FOR DISPUTED TERM "REMOVING" (cont'd):

2:62-68

8:27-30

8:40-48

EX ____ 37

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EXHIBIT L-2(a)

DC:50564677.1

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EXHIBIT L-2(b)

DC:50564677.1

Case 1:06-cv-00726-JJF

Document 389-4

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EXHIBIT L-2(c)

DC:50564677.1

Case 1:06-cv-00726-JJF

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EXHIBIT L-2(d)

DC:50564677.1

Case 1:06-cv-00726-JJF

Document 389-6

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EXHIBIT L-3

Case 1:06-cv-00726-JJF

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EX. L-3 LGD US PATENT NO. 4,624,737 INDEX OF DISPUTED TERMS CLAIM TERMS PAGE

a process for producing a thin-film transistor .............................................................................28 thin-film transistor ......................................................................................................................28 forming a gate electrode on an insulating substrate......................................................................7 forming ... on................................................................................................................................7 continuously depositing on said gate electrode and substrate a gate insulating film, a high-resistivity semiconductor film and a conducting film .......................................................9 continuously depositing ..............................................................................................................11 depositing on...............................................................................................................................11 depositing....................................................................................................................................11 gate insulating film .....................................................................................................................24 high-resistivity semiconductor film ............................................................................................34 conducting film ...........................................................................................................................24 a conducting film containing at least a low-resistivity semiconductor film ...............................24 low-resistivity semiconductor film .............................................................................................34 without exposing them to an oxidizing atmosphere .....................................................................1 them...............................................................................................................................................1 oxidizing atmosphere ....................................................................................................................1 selectively etched ........................................................................................................................40 they are partly left as an island region on said gate electrode ....................................................36 island region on said gate electrode ............................................................................................36 gate electrode ..............................................................................................................................31

-i-

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EX. L-3 LGD US PATENT NO. 4,624,737 INDEX OF DISPUTED TERMS CLAIM TERMS PAGE

a fourth step for selectively forming a source electrode and drain electrode .............................40 selectively forming......................................................................................................................40 source electrode ..........................................................................................................................31 drain electrode.............................................................................................................................31 contacting a part of the surface of said island region..................................................................36 a fifth step for selectively removing said conducting film exposed on said island region with said source and drain electrodes serving as at least a part of the mask ...................18 selectively removing said conducting film exposed on said island region.................................18 selectively removing ...................................................................................................................21 said conducting film exposed on said island region ...................................................................21 said source and drain electrodes serving as at least a part of the mask ......................................13 serving as at least a part of the mask...........................................................................................13 at least a part of the mask............................................................................................................13 a part of the mask........................................................................................................................13 mask ............................................................................................................................................16 surface passivation film ..............................................................................................................43 exposing a part of each of said source electrode, drain electrode and gate electrode.................43 exposing ......................................................................................................................................43

-ii-

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EXHIBIT L-3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction without exposing them to an oxidizing atmosphere - without exposing the gate insulating film, the high-resistivity semiconductor film, and the conducting film containing at least the lowresistivity semiconductor film to an atmosphere that would create a detectable amount of oxidation on a film them - the gate insulating film, the high-resistivity semiconductor film, and the conducting film containing at least the low-resistivity semiconductor film oxidizing atmosphere - an atmosphere that would create a detectable amount of oxidation on a film

EX 3 1

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "WITHOUT EXPOSING THEM TO AN OXIDIZING ATMOSPHERE":

1:45-59

2:21-24

3:26-33

3:53-59

EX 3 2

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "WITHOUT EXPOSING THEM TO AN OXIDIZING ATMOSPHERE" (cont'd):

4:3-12

EX 3 3

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "THEM":

2:18-24

EX 3 4

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "OXIDIZING ATMOSPHERE":

1:45-59

2:21-24

3:26-33

3:53-59

EX 3 5

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INTRINSIC EVIDENCE FOR DISPUTED TERM "OXIDIZING ATMOSPHERE" (cont'd):

4:3-12

EX 3 6

Case 1:06-cv-00726-JJF

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EXHIBIT 3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction forming a gate electrode on an insulating substrate - giving form or shape to a patterned electrically conductive material that controls current flow through the channel between the source electrode and drain electrode that is above and supported by or in contact with material (such as glass, quartz, ceramic, insulator-coated silicon or insulator coated metal) upon which the transistor is fabricated to provide mechanical support and electrical insulation

forming ... on - giving form or shape to...above and supported by or in contact with

EX 3 7

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERMS "FORMING A GATE ELECTRODE ON AN INSULATING SUBSTRATE" AND "FORMING... ON":

2:18-24

EX 3 8

Case 1:06-cv-00726-JJF

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EXHIBIT 3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction continuously depositing on said gate electrode and substrate a gate insulating film, a high-resistivity semiconductor film and a conducting film - the formation of the gate insulating film, the highresistivity semiconductor film and conducting film (without intervening films) above and supported by or in contact with (i) the patterned electrically conductive material that controls current flow through the channel between the source electrode and drain electrode and (ii) the material (such as glass, quartz, ceramic, insulator-coated silicon or insulator coated metal) upon which the transistor is fabricated to provide mechanical support and electrical insulation

EX 3 9

Case 1:06-cv-00726-JJF

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INTRINSIC EVIDENCE FOR DISPUTED TERM "CONTINUOUSLY DEPOSITING ON SAID GATE ELECTRODE AND SUBSTRATE A GATE INSULATING FILM, A HIGH-RESISTIVITY SEMICONDUCTOR FILM AND A CONDUCTING FILM":

Abstract

2:18-24C

EX 3 10

Case 1:06-cv-00726-JJF

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EXHIBIT 3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction continuously depositing - the formation of the gate insulating film, the high-resistivity semiconductor film and conducting film without intervening films depositing on - the formation of the gate insulating film, the highresistivity semiconductor film and conducting film above and supported by or in contact with depositing - the formation of the gate insulating film, the highresistivity semiconductor film and conducting film

EX 3 11

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INTRINSIC EVIDENCE FOR DISPUTED TERMS "CONTINUOUSLY DEPOSITING," " CONTINUOUSLY DEPOSITING," AND "DEPOSITING ON":

2:18-37

3:26-33

4:13-21

EX 3 12

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 16 of 48

EXHIBIT 3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction said source and drain electrodes serving as at least a part of the mask - the source and drain electrodes serving as at least a part of the pattern above a surface from which material is to be selectively removed, where the pattern is made of material that is resistive to the removal technique relative to the material to be removed serving as at least a part of the mask - serving as at least a part of the pattern above a surface from which material is to be selectively removed, where the pattern is made of material that is resistive to the removal technique relative to the material to be removed at least a part of the mask ­ at least a part of the pattern above a surface from which material is to be selectively removed, where the pattern is made of material that is resistive to the removal technique relative to the material to be removed a part of the mask - a part of the pattern above a surface from which material is to be selectively removed, where the pattern is made of material that is resistive to the removal technique relative to the material to be removed

EX 3 13

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 17 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERMS "SAID SOURCE AND DRAIN ELECTRODES SERVING AS AT LEAST A PART OF THE MASK" AND "SERVING AS AT LEAST A PART OF THE MASK":

2:18-37

EX 3 14

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 18 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERMS "AT LEAST A PART OF THE MASK" AND "A PART OF THE MASK":

2:18-37

EX 3 15

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 19 of 48

EXHIBIT 3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction mask - A pattern above a surface from which material is to be selectively removed. The pattern is made of material that is resistive to the removal technique relative to the material to be removed

EX 3 16

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 20 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "MASK":

2:18-37

EX 3 17

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 21 of 48

EXHIBIT 3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction a fifth step for selectively removing said conducting film exposed on said island region with said source and drain electrodes serving as at least a part of the mask a fifth step for removing selected regions only of the conducting film on the island region not covered by the source electrode, drain electrode or mask wherein the source electrode and drain electrode serve as at least a part of the pattern above a surface from which material is to be selectively removed; the pattern is made of material that is resistive to the removal technique relative to the material to be removed selectively removing said conducting film exposed on said island region - removing selected regions only of the conducting film on the island region not covered by the source electrode, drain electrode or mask

EX 3 18

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 22 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "FIFTH STEP FOR SELECTIVELY REMOVING SAID CONDUCTING FILM EXPOSING ON SAID ISLAND REGION WITH SAID SOURCE AND DRAIN ELECTRODES SERVING AS AT LEAST A PART OF THE MASK":

2:18-37

3:38-50

EX 3 19

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 23 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "SELECTIVELY REMOVING SAID CONDUCTING FILM EXPOSED ON SAID ISLAND REGION":

3:11-15

3:38-50

EX 3 20

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 24 of 48

EXHIBIT 3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction selectively removing ­ removing selected regions only

said conducting film exposed on said island region - the conducting film on the island region that is not covered by the source electrode, drain electrode or mask

EX 3 21

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 25 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "SELECTIVELY REMOVING":

2:18-37

3:38-50

EX 3 22

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 26 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "SAID CONDUCTING FILM EXPOSED ON SAID ISLAND REGION":

3:11-15

3:38-50

EX 3 23

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 27 of 48

EXHIBIT 3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction gate insulating film - a thickness of non-conductive material (such as SiNx) that has a high electrical resistance and insulates the transistor gate from the semiconductor

conducting film - a thickness of electrically conductive material

a conducting film containing at least a low-resistivity semiconductor film - the conducting film is composed of a low-resistivity semiconductor film and possibly other conductive films

EX 3 24

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 28 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "GATE INSULATING FILM":

2:34-39

EX 3 25

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 29 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "CONDUCTING FILM":

Abstract

3:26-33

3:47-52

EX 3 26

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 30 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "A CONDUCTING FILM CONTAINING AT LEAST A LOW-RESISTIVITY SEMICONDUCTOR FILM":

Abstract

3:26-33

3:47-52

EX 3 27

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 31 of 48

EXHIBIT 3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction a process for producing a thin-film transistor - a method for manufacturing thin-film transistors such as for a liquid crystal display

thin-film transistor - A threeterminal semiconductor device in which the current flow through one pair of terminals, the source and drain, is controlled or modulated by an electric field that penetrates the semiconductor; this field is introduced by a voltage applied at the third terminal, the gate, which is separated from the semiconductor by an insulating layer. The thin-film transistor is formed using thin-film techniques on an insulating substrate rather than a single crystal silicon wafer.

EX 3 28

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 32 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "A PROCESS FOR PRODUCING A THIN-FILM TRANSISTOR":

3:6-19

3:26-33

4:6-17

EX 3 29

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 33 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "THIN-FILM TRANSISTOR":

3:6-19

3:26-33

4:6-17

EX 3 30

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 34 of 48

EXHIBIT 3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction gate electrode - a patterned electrically conductive material that controls current flow through the channel between the source electrode and drain electrode

source electrode - a patterned, electrically conductive material formed over the source region. Current flows through the channel between the source electrode and drain electrode under control of the gate electrode

drain electrode - a patterned, electrically conductive material formed over the drain region. Current flows through the channel between the source and drain electrode under the control of the gate electrode

EX 3 31

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 35 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "GATE ELECTRODE":

2:18-24

EX 3 32

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 36 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERMS "SOURCE ELECTRODE" AND "DRAIN ELECTRODE":

2:54-62

3:36-40

EX 3 33

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 37 of 48

EXHIBIT 3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction high-resistivity semiconductor film - a thickness of semiconductor material (such as amorphous silicon, hydrogenated amorphous silicon, amorphous siliconfluorine alloy, amorphous silicon-hydrogen-fluorine alloy, or a microcrystalline amorphous silicon) that has a higher resistance to current flow relative to the lowresistivity semiconductor film

low-resistivity semiconductor film - a thickness of semiconductor material (such as low-resistivity amorphous silicon, hydrogenated amorphous silicon, amorphous siliconfluorine alloy, amorphous silicon-hydrogen-fluorine alloy, or a microcrystalline amorphous silicon which contains phosphorous or other impurities to enhance the conductivity of the film) that has a lower resistance to current flow relative to the highresistivity semiconductor film

EX 3 34

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 38 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERMS "HIGHRESISTIVITY SEMICONDUCTOR FILM" AND "LOWRESISTIVITY FILM":

2:34-45

3:26-33

EX 3 35

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 39 of 48

EXHIBIT 3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction they are partly left as an island region on said gate electrode - a portion of the high resistivity semiconductor film and conducting film has been etched around its perimeter into a region located over the gate electrode of a thin-film transistor

island region on said gate electrode - a portion of the high resistivity semiconductor film and conducting film has been etched around its perimeter into a region located over the gate electrode of a thin-film transistor contacting a part of the surface of said island region - touching a part of the surface of the island region

EX 3 36

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 40 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "THEY ARE PARTLY LEFT AS AN ISLAND REGION ON SAID GATE ELECTRODE":

2:54-61

3:30-35

EX 3 37

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 41 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "ISLAND REGION ON SAID GATE ELECTRODE":

2:54-61

3:30-35

EX 3 38

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 42 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "CONTACTING A PART OF THE SURFACE OF SAID ISLAND REGION":

2:54-61

3:30-35

EX 3 39

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 43 of 48

EXHIBIT 3 U.S. PATENT NO. 4,624,737 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction selectively etched - The removal of selected portions of a surface using etching techniques (such as wet etching, plasma etching, reactive ion etching, and ion etching) in order to produce a desired pattern on the surface

a fourth step for selectively forming a source electrode and drain electrode - forming a source electrode and drain electrode in selected regions only

selectively forming - forming in selected regions only

EX 3 40

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 44 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERMS "SELECTIVELY ETCHED" AND "A FOURTH STEP FOR SELECTIVELY FORMING A SOURCE ELECTRODE AND DRAIN ELECTRODE":

2:54-61

3:30-35

EX 3 41

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 45 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "SELECTIVELY FORMING":

2:54-62

3:36-40

EX 3 42

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 46 of 48

EXHIBIT 3 U.S. PATENT NO. ______ TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction surface passivation film - a thickness of material that provides protection such as electrical stability and chemical isolation

exposing a part of each of said source electrode, drain electrode and gate electrode removing portions of one or more layers to uncover a part of each of said source electrode, drain electrode and gate electrode

exposing - removing portions of one or more layers to uncover

EX 3 43

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 47 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERM "SURFACE PASSIVATION FILM":

2:54-62

3:11-21

3:42-47

EX 3 44

Case 1:06-cv-00726-JJF

Document 389-7

Filed 08/12/2008

Page 48 of 48

INTRINSIC EVIDENCE FOR DISPUTED TERMS "EXPOSING A PART OF EACH SAID SOURCE ELECTRODE, DRAIN ELECTRODE AND GATE ELECTRODE" AND "EXPOSING":

2:54-62

3:38-50

EX 3 45

Case 1:06-cv-00726-JJF

Document 389-8

Filed 08/12/2008

Page 1 of 20

EXHIBIT L-4(a)

DC:50564677.1

Case 1:06-cv-00726-JJF

Document 389-8

Filed 08/12/2008

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Case 1:06-cv-00726-JJF

Document 389-8

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Case 1:06-cv-00726-JJF

Document 389-9

Filed 08/12/2008

Page 1 of 108

EXHIBIT L-4(b)

DC:50564677.1

Case 1:06-cv-00726-JJF

Document 389-9

Filed 08/12/2008

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EXHIBIT L-4(c)

DC:50564677.1

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EXHIBIT L-5

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EX. L-5 LGD US PATENT NO. 5,825,449 INDEX OF DISPUTED TERMS CLAIM TERMS PAGE

wiring structure .............................................................................................................................9 conductive layer ............................................................................................................................1 layer...............................................................................................................................................9 formed on a first portion of said substrate ..................................................................................14 formed on ....................................................................................................................................14 formed on a second portion of said substrate..............................................................................14 formed on a first portion of said first insulative layer ................................................................14 insulative layer ..............................................................................................................................9 formed on said second conductive layer and on a second portion of said first insulative layer overlying said first conductive layer ..................................................14 overlying .......................................................................................................................................9 contact hole .................................................................................................................................16 provided through.........................................................................................................................16 expose part of said ... layer ........................................................................................................16 extends through...........................................................................................................................16 one of said first and second conductive layers is connected to one of a plurality of terminals of a thin film transistor ..........................................................................21 one of said first and second conductive layers..............................................................................1 one.................................................................................................................................................1 connected to ..................................................................................................................................1 one of a plurality of terminals of a thin film transistor ...............................................................21 a plurality of terminals of a thin film transistor ..........................................................................21

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EX. L-5 LGD US PATENT NO. 5,825,449 INDEX OF DISPUTED TERMS CLAIM TERMS PAGE

thin film transistor.......................................................................................................................21 liquid crystal display device........................................................................................................24 gate electrode ..............................................................................................................................32 gate pad .........................................................................................................................................6 source pad .....................................................................................................................................6 a gate insulating film on said surface of said substrate...............................................................27 gate insulating film .....................................................................................................................27 insulating film .............................................................................................................................27 a semiconductor layer on said portion of said gate insulating film ............................................29 semiconductor layer ....................................................................................................................29 impurity-doped semiconductor layer ..........................................................................................29 a source electrode and a drain electrode on said semiconductor layer .......................................32 source electrode ..........................................................................................................................32 drain electrode.............................................................................................................................32 passivation layer..........................................................................................................................24 exposing said gate pad portion....................................................................................................35 exposing ......................................................................................................................................35 pixel electrode.............................................................................................................................35 transparent conductive layer .......................................................................................................35 a method of manufacturing a liquid crystal display device ........................................................39 patterning ... to form an active layer ..........................................................................................43 patterning ....................................................................................................................................43

-ii-

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EX. L-5 LGD US PATENT NO. 5,825,449 INDEX OF DISPUTED TERMS CLAIM TERMS PAGE

active layer ..................................................................................................................................39 selectively etching.......................................................................................................................43 patterning a pixel electrode electrically connected to said drain electrode ................................43 electrically connect/electrically connecting/electrically connected............................................39

-iii-

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EXHIBIT L-5 U.S. PATENT NO. 5,825,449 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction

conductive layer1 ­ thickness of electrically conductive material

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connected to2 ­ directly connected to

one of said first and second conductive layers ­ one, but not both, of the first and second conductive layers

one ­ a single layer

1

Disputed Term "conductive layer" also appears in asserted claims 10 and 11 in the same context. Term "connected to" also appears in asserted claim 11 in the same context.

2 Disputed

EX 5 1

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INTRINSIC EVIDENCE FOR DISPUTED TERM "CONDUCTIVE LAYER":

4:56-64

Appl. No. 08/781,188, 11/17/1997 Amendment, p. 6

EX 5 2

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INTRINSIC EVIDENCE FOR DISPUTED TERM "CONNECTED TO":

6:8-19

Appl. No. 08/781,188, 11/17/1997 Amendment, p. 2

Appl. No. 08/781,188, 11/17/97 Amendment, p. 5

EX 5 3

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INTRINSIC EVIDENCE FOR DISPUTED TERMS "ONE OF SAID FIRST AND SECOND CONDUCTIVE LAYERS" AND "ONE":

6:8-19

Appl. No. 08/781,188, 11/17/1997, p. 2

Appl. No. 08/781,188, 11/17/1997 Amendment, p. 5

EX 5 4

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INTRINSIC EVIDENCE FOR DISPUTED TERMS "ONE OF SAID FIRST AND SECOND CONDUCTIVE LAYERS" AND "ONE" (cont'd):

Appl. No. 08/781,188, 11/17/1997 Amendment, p. 6

EX 5 5

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Page 10 of 52

EXHIBIT 5 U.S. PATENT NO. 5,825,449 TERMS IN DISPUTE
ASSERTED CLAIM 10 LGD's Claim Construction

gate pad1 ­ a portion of patterned electrically conductive material that is provided near the periphery of the thin film transistor array to receive a gate signal

source pad2 ­ a portion of patterned, electrically conductive material that is provided near the periphery of the thin film transistor array to receive a data signal

~

1

Disputed Term "gate pad" also appears in asserted claim 11 in the same context. Term "source pad" also appears in asserted claim 11 in the same context.

2 Disputed

EX 5 6

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INTRINSIC EVIDENCE FOR DISPUTED TERMS "GATE PAD" AND "SOURCE PAD":

1:22-30

1:51-60

EX 5 7

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INTRINSIC EVIDENCE FOR DISPUTED TERMS "GATE PAD" AND "SOURCE PAD" (cont'd):

4:11-15

EX 5 8

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EXHIBIT 5 U.S. PATENT NO. 5,825,449 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction

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wiring structure ­ a structure electrically connecting at least two points

layer1 ­ a thickness of material

insulative layer ­ a thickness of non-conductive material (such as SiNx) that has a high electrical resistance

overlying2 ­ above

1

Disputed Term "layer" also appears in asserted claims 10 and 11 in the same context. Term "overlying" also appears in asserted claims 10 and 11 in the same context.

2 Disputed

EX 5 9

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INTRINSIC EVIDENCE FOR DISPUTED TERM "WIRING STRUCTURE":

4:22-27

EX 5 10

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INTRINSIC EVIDENCE FOR DISPUTED TERM "LAYER":

4:56-64

Appl. No. 08/781,188, 11/17/1997 Amendment, p. 6

EX 5 11

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INTRINSIC EVIDENCE FOR DISPUTED TERM "INSULATIVE LAYER":

1:39-48

3:50-56

EX 5 12

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INTRINSIC EVIDENCE FOR DISPUTED TERM "OVERLYING":

1:39-50

EX 5 13

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EXHIBIT 5 U.S. PATENT NO. 5,825,449 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction formed on a first portion of said substrate - above and in contact with a first part of the substrate

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formed on ­ above and in contact with formed on a second portion of said substrate - above and in contact with a second part of the substrate formed on a first portion of said first insulative layer ­ above and in contact with a first part of the first insulative layer formed on said second conductive layer and on a second portion of said first insulative layer overlying said first conductive layer ­ above and in contact with the second conductive layer and above and in contact with a second part of the first insulative layer above the first conductive layer

EX 5 14

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INTRINSIC EVIDENCE FOR DISPUTED TERMS PERTAINING TO "FORMED ON . . .":

1:34-39

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4:56-5:5

6:3-5

EX 5 15

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EXHIBIT 5 U.S. PATENT NO. 5,825,449 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction contact hole1 ­ an opening in one or more insulative layers to expose a portion of a conductive layer for purposes of forming an electrical connection provided through2 ­ the contact hole is formed in the layer

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expose part of said . . . layer ­ removing portions of one or more layers to uncover at least part of another layer

extends through ­ is disposed in

1

Disputed Term "contact hole" also appears in asserted claims 10 and 11 in the same context. Term "provided through" also appears in asserted claim 10 in the same context.

2 Disputed

EX 5 16

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INTRINSIC EVIDENCE FOR DISPUTED TERMS "CONTACT HOLE", "PROVIDED THROUGH" AND "EXTENDS THROUGH":

2:37-55

3:1-14

EX 5 17

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INTRINSIC EVIDENCE FOR DISPUTED TERMS "CONTACT HOLE", "PROVIDED THROUGH" AND "EXTENDS THROUGH" (cont'd):

4:6-15

5:6-15

EX 5 18

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INTRINSIC EVIDENCE FOR DISPUTED TERM "EXPOSE PART OF SAID . . . LAYER":

2:37-55

3:1-14

EX 5 19

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INTRINSIC EVIDENCE FOR DISPUTED TERM "EXPOSE PART OF SAID . . . LAYER" (cont'd):

4:6-15

5:6-15

EX 5 20

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EXHIBIT 5 U.S. PATENT NO. 5,825,449 TERMS IN DISPUTE
ASSERTED CLAIM 1 LGD's Claim Construction one of said first and second conductive layers is connected to one of a plurality of terminals of a thin film transistor ­ one, but not both, of the first and second conductive layers is directly connected to one terminal of a thin film transistor one of a plurality of terminals of a thin film transistor ­ one of the terminals (i.e., source, drain, or gate) of a thin film transistor a plurality of terminals of a thin film transistor ­ the terminals (i.e., source, drain, or gate) of a thin film transistor thin film transistor - a three terminal device in which the current flow through one pair of terminals, the source and drain, is controlled or modulated by an electric field that penetrates the semiconductor; this field is introduced by a voltage applied at the third terminal, the gate, which is separated from the semiconductor by an insulating layer. The thin-film transistor is formed using thin-film techniques on an insulating substrate rather than in a single crystal silicon wafer

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EX 5 21

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INTRINSIC EVIDENCE FOR DISPUTED TERMS PERTAINING TO "PLURALITY OF TERMINALS AT A THIN FILM TRANSISTOR":

1:22-30

2:5-10

EX 5 22

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INTRINSIC EVIDENCE FOR DISPUTED TERMS PERTAINING TO "PLURALITY OF TERMINALS AT A THIN FILM TRANSISTOR" (cont'd):

4:16-27

App. 08/781,188, 11/17/1997 Amendment, p. 5

EX 5 23

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Page 28 of 52

EXHIBIT 5 U.S. PATENT NO. 5,825,449 TERMS IN DISPUTE
ASSERTED CLAIM 10 LGD's Claim Construction

liquid crystal display device1a type of display that generates an image by directing light through an array of liquid crystal pixels, where the amount of light effused by each pixel is controlled via an electric field varying the orientation of the liquid crystal molecules contained within the pixel

~

passivation layer ­ a thickness of insulative material that provides protection such as electrical stability and chemical isolation

1

Disputed Term "liquid crystal display" also appears in asserted claim 11 in the same context.

EX 5 24

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INTRINSIC EVIDENCE FOR DISPUTED TERM "LIQUID CRYSTAL DISPLAY DEVICE":

1:13-20

2:1-4

EX 5 25

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INTRINSIC EVIDENCE FOR DISPUTED TERM "PASSIVATION LAYER":

2:5-10

4:6-15

EX 5 26

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Page 31 of 52

EXHIBIT 5 U.S. PATENT NO. 5,825,449 TERMS IN DISPUTE
ASSERTED CLAIM 10 LGD's Claim Construction

a gate insulating film on said surface of said substrate ­ a thickness of non-conductive material (such as SiNx) that has high electrical resistance and insulates the transistor gate from the semiconductor above and in contact with at least part of the surface of the substrate

~

gate insulating film